Electrical properties and defect compensation mechanism of B-site Cu2+ substituted K0.5Na0.5NbO3 ceramics
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Cu2+ substituted K0.5Na0.5NbO3 ceramics at B-site K0.5Na0.5(Nb1−xCux)O3−3x/2 (KNNC) were prepared by a solid state method. The dielectric, ferroelectric properties and defect compensation mechanism were studied. With the concentration of Cu2+ increasing from 0.005 to 0.10, permittivity and dielectric loss decrease, but further increasing the concentration of Cu2+ increasing leads to the increment of permittivity and dielectric loss. All KNNC ceramics exhibit double hysteresis loop characteristics. When the doping concentration Cu2+ is low (x = 0.0075), the double hysteresis loop disappears at large electric field, nonetheless, when x = 0.015, it maintains the characteristics of the double hysteresis loop even under the high electric field. The corresponding mechanism is explained from the aspects of correlation between defect dipoles and polarization orientation.
This work was financially supported by National Natural Science Foundation of China (51802246), Natural Science Basic Research Plan in Shaanxi Province of China (2018JQ5110), State Key Laboratory of Solidification Processing in NWPU (SKLSP201839), Fund Program of the Scientific Activities of Selected Returned Overseas Professionals in Shaanxi Province, Special Scientific Research Plan Projects of Shaanxi Education Department (17JK0382) and Scientific and Technological Project of Yulin City (2016-16-6).
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