Study on the interface coupling effect in PbZr0.52Ti0.48O3/Ba(Mg1/3Ta2/3)O3 thin films
This paper was focused on the PbZr0.52Ti0.48O3/Ba(Mg1/3Ta2/3)O3 (PZT/BMT) thin films and the interface coupling effect in PZT/BMT thin films was studied. The results show that the dielectric constant of PZT/BMT thin films increases and the dielectric loss of PZT/BMT thin films decreases with the increase of interface number. The interface polarization model has been set up and the total dielectric constant increases linearly with the interface number and dielectric constant of interface. As the interface number increases, the relaxation activation energy of grains decreases from 0.49 to 0.45 eV while that of interfaces increases from 0.64 to 0.83 eV. The space charges can easily move from grains to interfaces, which has a positive contribution to the dielectric constant of interface.
This work was financially supported by the National Natural Science Foundation of China (Grant No. 51802093 and 51572205), the Research Foundation for Talents of Hunan Institute of Technology (Grant No. HQ17006), the Scientific Research Fund of Hunan Provincial Education Department (Grant No. 17C0435), the characteristic application discipline of material science and engineering in Hunan province.
- 9.R.R. Li, W. Chen, J. Zhou, H. Sun, Y. Bao, J. Mater. Sci.: Mater. Electron. 26, 7361–7366 (2015)Google Scholar