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Dielectric characterization of BSA doped-PANI interlayered metal–semiconductor structures

  • Nursel KaraoğlanEmail author
  • Habibe Uslu Tecimer
  • Şemsettin Altındal
  • Cuma Bindal
Article
  • 17 Downloads

Abstract

The measured capacitance and conductance–voltage (C&G/ω–V) data between 1 and 200 kHz of Al/(BSA-doped-PANI)/p-InP structure were examined to uncover real and imaginary components of complex permittivity (ε* = ε′ − jε″), loss tangent (tanδ), complex electric modulus (M* = M′ + jM″), and electrical conductivity (σ). It was uncovered that dielectric constant (ε′), dielectric loss (ε″), tanδ, real and imaginary components (M′ and M″) show a big dispersive behavior at low frequencies due to the oriental and the interfacial polarizations, as well as the surface states (Nss) and the BSA doped-PANI interlayer. Such behavior in ε′, ε″, and tanδ, behavior with frequency was also explained by Maxwell–Wagner relaxation. The values of σ are almost constant at lower-intermediate frequencies, but they start increase at high frequencies which are corresponding to the dc and ac conductivity, respectively. The values of M′ and M″ are lower in the low frequency zone and they become increase with increasing frequency at accumulation region due to the short-range charge carriers mobility. Ultimately, dielectric parameters and electric modulus alteration with frequency is the consequence of surface states and relaxation phenomena.

Notes

Acknowledgements

This work was supported by the Karabük University Scientific Research Project Unit under Contract No: KBÜ BAP-17-DS-409. The authors would like to thank to the Karabük University Scientific Research Project Unit for their financial support.

References

  1. 1.
    S.O. Tan, Comparison of graphene and zinc dopant materials for organic polymer interfacial layer between metal semiconductor structure. IEEE Trans. Electron Devices 64(12), 5121–5127 (2017)Google Scholar
  2. 2.
    Ş. Altındal, H. Uslu, The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures. J. Appl. Phys. 109(7), 074503 (2011)Google Scholar
  3. 3.
    S.A. Yerişkin, M. Balbaşı, I. Orak, The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. J. Mater. Sci. 28(18), 14040–14048 (2017)Google Scholar
  4. 4.
    H. Tecimer, S.O. Tan, Ş. Altındal, Frequency-dependent admittance analysis of the metal-semiconductor structure with an interlayer of Zn-doped organic polymer nanocomposites. IEEE Trans. Electron Devices 65(1), 231–236 (2017)Google Scholar
  5. 5.
    H. Tecimer, On the frequency–voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures. J. Mater. Sci. 29(23), 20141–20145 (2018)Google Scholar
  6. 6.
    G.E. Demir, İ. Yücedağ, Y. Azizian-Kalandaragh, Ş. Altındal, Temperature and interfacial layer effects on the electrical and dielectric properties of Al/(CdS-PVA)/p-Si (MPS) structures. J. Electron. Mater. 47(11), 6600–6606 (2018)Google Scholar
  7. 7.
    H.C. Card, E.H. Rhoderick, Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D 4(10), 1589 (1971)Google Scholar
  8. 8.
    C.C. Lin, Y.H. Wu, T.H. Hung, Y.T. Chang, Impact of interfacial layer position on resistive switching behaviors for ZrTiO x-based metal–insulator–metal devices. IEEE Trans. Nanotechnol. 13(4), 634–638 (2014)Google Scholar
  9. 9.
    S.O. Tan, H. Tecimer, O. Çiçek, Comparative investigation on the effects of organic and inorganic interlayers in Au/n-GaAs Schottky diodes. IEEE Trans. Electron Devices 64(3), 984–990 (2017)Google Scholar
  10. 10.
    N.G. McCrum, B.E. Read, G. Williams, Anelastic and dielectric effects in polymeric solids (Wiley, New York, 1967)Google Scholar
  11. 11.
    E. Mar et al., Evaluation of electric and dielectric properties of metal–semiconductor structures with 2% GC-doped-(Ca3Co4Ga0.001Ox) interlayer. IEEE Trans. Electron Devices 65(9), 3901–3908 (2018)Google Scholar
  12. 12.
    M.M. Hoque et al., The impedance spectroscopic study and dielectric relaxation in A (Ni1/3Ta2/3) O3 [A = Ba, Ca and Sr]. Phys. B 407(18), 3740–3748 (2012)Google Scholar
  13. 13.
    S. Yasufuku et al., Maxwell-wagner dielectric polarization in polypropylene film/aromatic dielectric fluid system for high voltage capacitor use. IEEE Trans. Electr. Insul. 6, 334–342 (1979)Google Scholar
  14. 14.
    J. Chen et al., Current–voltage–temperature and capacitance–voltage–temperature characteristics of TiW alloy/p-InP Schottky barrier diode. J. Alloys Compd. 649, 1220–1225 (2015)Google Scholar
  15. 15.
    B. Akkal et al., Illumination dependence of I-V and C–V characterization of Au/InSb/InP (1 0 0) Schottky structure. Appl. Surf. Sci. 253(3), 1065–1070 (2006)Google Scholar
  16. 16.
    V. Janardhanam et al., Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers. J. Alloys Compd. 504(1), 146–150 (2010)Google Scholar
  17. 17.
    P.S. Reddy, V. Janardhanam, I. Jyothi, S.H. Yuk, V.R. Reddy, J.C. Jeong, S.N. Lee, C.J. Choi, Modification of Schottky barrier properties of Ti/p-type InP Schottky diode by polyaniline (PANI) organic interlayer. J. Semicond. Technol. Sci. 16(5), 664–674 (2016)Google Scholar
  18. 18.
    O. Çiçek, S.O. Tan, H. Tecimer, Ş. Altındal, Role of graphene-doped organic/polymer nanocomposites on the electronic properties of Schottky junction structures for photocell applications. J. Electron. Mater. 47(12), 7134–7142 (2018)Google Scholar
  19. 19.
    H.U. Tecimer, M.A. Alper, H. Tecimer, S.O. Tan, Ş. Altındal, Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes. Polym. Bull. 75(9), 4257–4271 (2018)Google Scholar
  20. 20.
    Y.S. Altındal, M. Balbaşı, A. Tataroğlu, Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped-PVA/n-Si (MPS) structures. J. Appl. Polym. Sci. (2016).  https://doi.org/10.1002/app.43827 Google Scholar
  21. 21.
    J. Jang, J. Ha, J. Cho, Fabrication of water-dispersible polyaniline-poly (4-styrenesulfonate) nanoparticles for inkjet-printed chemical-sensor applications. Adv. Mater. 19(13), 1772–1775 (2007)Google Scholar
  22. 22.
    S. Ashokan, V. Ponnuswamy, P. Jayamurugan, Comparative study of pure polyaniline with various oxidants by a template free method. Mater. Sci. Semicond. Process. 30, 494–501 (2015)Google Scholar
  23. 23.
    J. Stejskal et al., The effect of polymerization temperature on molecular weight, crystallinity, and electrical conductivity of polyaniline. Synth. Met. 96(1), 55–61 (1998)Google Scholar
  24. 24.
    P.J. Saikia, P.C. Sarmah, Investigation of polyaniline thin film and schottky junction with aluminium for electrical and optical characterization. Mater. Sci. Appl. 2(08), 1022 (2011)Google Scholar
  25. 25.
    S. Ashokan et al., Influence of the counter ion on the properties of organic and inorganic acid doped polyaniline and their Schottky diodes. Superlattices Microstruct. 85, 282–293 (2015)Google Scholar
  26. 26.
    Z. Zhang, Z. Wei, M. Wan, Nanostructures of polyaniline doped with inorganic acids. Macromolecules 35(15), 5937–5942 (2002)Google Scholar
  27. 27.
    G. Ćirić-Marjanović, Recent advances in polyaniline research: polymerization mechanisms, structural aspects, properties and applications. Synth. Met. 177, 1–47 (2013)Google Scholar
  28. 28.
    J. Stejskal et al., Polyaniline prepared in the presence of various acids: a conductivity study. Polym. Int. 53(3), 294–300 (2004)Google Scholar
  29. 29.
    S.H. Kim, J.H. Seong, K.W. Oh, Effect of dopant mixture on the conductivity and thermal stability of polyaniline/Nomex conductive fabric. J. Appl. Polym. Sci. 83(10), 2245–2254 (2002)Google Scholar
  30. 30.
    B. Belaabed, S. Lamouri, J.L. Wojkiewicz, Curing kinetics, thermomechanical and microwave behaviors of PANI-doped BSA/epoxy resin composites. Polym. J. 43(8), 683 (2011)Google Scholar
  31. 31.
    W.H. Jang et al., Synthesis and electrorheology of camphorsulfonic acid doped polyaniline suspensions. Colloid Polym. Sci. 279(8), 823–827 (2001)Google Scholar
  32. 32.
    W. Yin, E. Ruckenstein, Soluble polyaniline co-doped with dodecyl benzene sulfonic acid and hydrochloric acid. Synth. Met. 108(1), 39–46 (2000)Google Scholar
  33. 33.
    A. Kaya et al., The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method. Ceram. Int. 42(2), 3322–3329 (2016)Google Scholar
  34. 34.
    E.H. Nicollian, J.R. Brews, E.H. Nicollian, MOS (metal oxide semiconductor) physics and technology, vol. 1987 (Wiley, New York et al., 1982)Google Scholar
  35. 35.
    S.K. Tripathi, M. Sharma, Analysis of the forward and reverse bias IV and CV characteristics on Al/PVA: n-PbSe polymer nanocomposites Schottky diode. J. Appl. Phys. 111(7), 074513 (2012)Google Scholar
  36. 36.
    J. Ho, T.R. Jow, S. Boggs, Historical introduction to capacitor technology. IEEE Electr. Insul. Mag. 26(1), 20–25 (2010)Google Scholar
  37. 37.
    J.-H. Lin, J.-J. Zeng, Y.-J. Lin, Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment. Thin Solid Films 550, 582–586 (2014)Google Scholar
  38. 38.
    A. Chełkowski, Dielectric physics, vol. 9 (Elsevier, Amsterdam, 1980)Google Scholar
  39. 39.
    A. Dutta, C. Bharti, T.P. Sinha, AC conductivity and dielectric relaxation in CaMg1/3Nb2/3O3. Mater. Res. Bull. 43(5), 1246–1254 (2008)Google Scholar
  40. 40.
    M.M. Hoque et al., Dielectric relaxation and conductivity of Ba(Mg1/3Ta2/3)O3 and Ba(Zn1/3Ta2/3)O3. J. Mater. Sci. Technol. 30(4), 311–320 (2014)Google Scholar
  41. 41.
    S. Alptekin, A. Tataroğlu, Ş. Altındal, Dielectric, modulus and conductivity studies of Au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature. J. Mater. Sci. 30, 6853–6859 (2019)Google Scholar
  42. 42.
    S. Demirezen, E.E. Tanrıkulu, Ş. Altındal, The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors. Indian J. Phys. 93, 739–747 (2019)Google Scholar
  43. 43.
    S.O. Tan et al., Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities. J. Mater. Sci. 27(8), 8340–8347 (2016)Google Scholar
  44. 44.
    M. Gökçen et al., UV illumination effects on electrical characteristics of metal–polymer–semiconductor diodes fabricated with new poly (propylene glycol)-b-polystyrene block copolymer. Compos. B Eng. 57, 8–12 (2014)Google Scholar
  45. 45.
    A. Lösche, N.F. Mott, E.A. Davis, Electronic processes in non-crystalline materials clarendon-press, Oxford 1971 437 Seiten.£ 7, 50. Kristall Tech. 7(4), K55–K56 (1972)Google Scholar
  46. 46.
    S. Amrin, V.D. Deshpande, Dielectric relaxation and ac conductivity behavior of carboxyl functionalized multiwalled carbon nanotubes/poly (vinyl alcohol) composites. Physica E 87, 317–326 (2017)Google Scholar
  47. 47.
    X. Wu, E.S. Yang, H.L. Evans, Negative capacitance at metal-semiconductor interfaces. J. Appl. Phys. 68(6), 2845–2848 (1990)Google Scholar
  48. 48.
    H.N. Chandrakala, B. Ramaraj, G.M. Madhu, The influence of zinc oxide–cerium oxide nanoparticles on the structural characteristics and electrical properties of polyvinyl alcohol films. J. Mater. Sci. 47(23), 8076–8084 (2012)Google Scholar

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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Department of Property Protection and Safety Division, TOBB Technical Sciences Vocational SchoolKarabük UniversityKarabükTurkey
  2. 2.Department of Electrical-Electronic Engineering, Faculty of EngineeringKarabük UniversityKarabükTurkey
  3. 3.Department of Physics, Faculty of ScienceGazi UniversityAnkaraTurkey
  4. 4.Department of Metallurgy and Materials Engineering, Faculty of EngineeringSakarya UniversitySakaryaTurkey
  5. 5.Sakarya University, Biomedical, Magnetic and Semi Conductive Materials Research Center (BIMAS-RC)SakaryaTurkey

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