The effect of stress state on AlN thin films and AlN/Finemet magnetoelectric composite device
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Piezoelectric aluminum nitride (AlN) thin films with high c-axis oriented were deposited on Fe73.5Cu1Nb3Si13.5B9 (Finemet) substrates using a pulsed DC magnetron sputtering system. The influences of stress state on piezoelectric properties of AlN thin films, and magnetoelectric (ME) coupling properties of AlN/Finemet device have been investigated. The result shows that samples with flat state have a good piezoelectric property of 1.71 pm/V, which is higher than samples with compressive state and tensile state. It has been found that the stress state of the sample has a significant effect on magnetoelectric coupling coefficient. The ME coupling coefficient αME of samples were measured as 212.5 V/cm Oe (flat state), 167.5 V/cm Oe (compressive state), 141.6 V/cm Oe (tensile state), which is potential for weak magnetic field measurement.
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