The effect of stress state on AlN thin films and AlN/Finemet magnetoelectric composite device

  • Liping Yin
  • Wenlong Hu
  • Ming Wu
  • Jiaxing Shi
  • Jie ZhuEmail author


Piezoelectric aluminum nitride (AlN) thin films with high c-axis oriented were deposited on Fe73.5Cu1Nb3Si13.5B9 (Finemet) substrates using a pulsed DC magnetron sputtering system. The influences of stress state on piezoelectric properties of AlN thin films, and magnetoelectric (ME) coupling properties of AlN/Finemet device have been investigated. The result shows that samples with flat state have a good piezoelectric property of 1.71 pm/V, which is higher than samples with compressive state and tensile state. It has been found that the stress state of the sample has a significant effect on magnetoelectric coupling coefficient. The ME coupling coefficient αME of samples were measured as 212.5 V/cm Oe (flat state), 167.5 V/cm Oe (compressive state), 141.6 V/cm Oe (tensile state), which is potential for weak magnetic field measurement.



  1. 1.
    W. Eerenstein, N.D. Mathur, J.F. Scott, Nature 442, 759 (2006)CrossRefGoogle Scholar
  2. 2.
    D.X. Zhou, L.B. Hao, S.P. Gong, Q.Y. Fu, F. Xue, G. Jian, J. Mater. Sci. 23, 2098 (2012)Google Scholar
  3. 3.
    H.Q. Chen, Y.G. Wang, J. Mater. Sci. 24, 4938 (2013)Google Scholar
  4. 4.
    M. Fiebig, J. Phys. D: Appl. Phys. 38, R123 (2005)CrossRefGoogle Scholar
  5. 5.
    K.F. Wang, J.M. Liu, Z.F. Ren, Adv. Phys. 58, 321 (2009)CrossRefGoogle Scholar
  6. 6.
    G.S. Ke, Y. Tao, Y.S. Lu, Y.B. Bian, T. Zhu, H.B. Guo, Y.G. Chen, J. Alloys Compd. 646, 446 (2015)CrossRefGoogle Scholar
  7. 7.
    J.P. Kar, S. Mukherjee, G. Bose, S. Tuli, J. Mater. Sci. 19, 261 (2008)Google Scholar
  8. 8.
    A.V. Singh, S. Chandra, G. Bose, Thin Solid Films 519, 5846 (2011)CrossRefGoogle Scholar
  9. 9.
    H.C. Lee, J.Y. Lee, J. Mater. Sci. 8, 385 (1997)Google Scholar
  10. 10.
    B. Wang, M. Wang, R.Z. Wang, A.P. Huang, H. Zhou, Y.J. Zou, H. Yan, S.P. Wong, Mater. Lett. 53, 367 (2002)CrossRefGoogle Scholar
  11. 11.
    H. Jin, J. Zhou, S.R. Dong, B. Feng, J.K. Luo, D.M. Wang, W.I. Milne, C.Y. Yang, Thin Solid Films 15, 4863 (2012)CrossRefGoogle Scholar
  12. 12.
    G.F. Iriarte, J.G. Rodríguez, F. Calle, Mater. Res. Bull. 9, 1039 (2010)CrossRefGoogle Scholar
  13. 13.
    P.J. Kelly, R.D. Arnell, Vacuum 3, 159 (2000)CrossRefGoogle Scholar
  14. 14.
    K. Sarakinos, J. Alami, S. Konstantinidis, Surf. Coat. Technol. 11, 1661 (2010)CrossRefGoogle Scholar
  15. 15.
    Z.Q. Chu, H.D. Shi, W.L. Shi, G.X. Liu, J.G. Wu, J.K. Yang, S.X. Dong, Adv. Mater. 29, 1606022 (2017)CrossRefGoogle Scholar
  16. 16.
    A. Ababneh, M. Alsumady, H. Seidel, T. Manzaneque, J. Hernando-García, J.L. Sánchez-Rojas, A. Bittner, U. Schmid, Appl. Surf. Sci. 16, 59 (2012)CrossRefGoogle Scholar
  17. 17.
    Y.C. Yang, C. Song, X.H. Wang, F. Zeng, F. Pan, Appl. Phys. Lett. 92, 012907 (2008)CrossRefGoogle Scholar
  18. 18.
    A.F. Wright, J. Appl. Phys. 82, 2833 (1997)CrossRefGoogle Scholar
  19. 19.
    A. Ababneh, U. Schmid, J. Hernando, J.L. Sánchez-Rojas, H. Seidel, Mater. Sci. Eng. B 3, 253 (2010)CrossRefGoogle Scholar
  20. 20.
    L. Chen, P. Li, Y.M. Wen, D. Wang, J. Alloys Compd. 14, 4811 (2011)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Liping Yin
    • 1
  • Wenlong Hu
    • 1
  • Ming Wu
    • 1
  • Jiaxing Shi
    • 1
  • Jie Zhu
    • 1
    Email author
  1. 1.State Key Laboratory for Advanced Metals and MaterialsUniversity of Science and Technology BeijingBeijingChina

Personalised recommendations