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The effect of stress state on AlN thin films and AlN/Finemet magnetoelectric composite device

  • Liping Yin
  • Wenlong Hu
  • Ming Wu
  • Jiaxing Shi
  • Jie ZhuEmail author
Article
  • 11 Downloads

Abstract

Piezoelectric aluminum nitride (AlN) thin films with high c-axis oriented were deposited on Fe73.5Cu1Nb3Si13.5B9 (Finemet) substrates using a pulsed DC magnetron sputtering system. The influences of stress state on piezoelectric properties of AlN thin films, and magnetoelectric (ME) coupling properties of AlN/Finemet device have been investigated. The result shows that samples with flat state have a good piezoelectric property of 1.71 pm/V, which is higher than samples with compressive state and tensile state. It has been found that the stress state of the sample has a significant effect on magnetoelectric coupling coefficient. The ME coupling coefficient αME of samples were measured as 212.5 V/cm Oe (flat state), 167.5 V/cm Oe (compressive state), 141.6 V/cm Oe (tensile state), which is potential for weak magnetic field measurement.

Notes

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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Liping Yin
    • 1
  • Wenlong Hu
    • 1
  • Ming Wu
    • 1
  • Jiaxing Shi
    • 1
  • Jie Zhu
    • 1
    Email author
  1. 1.State Key Laboratory for Advanced Metals and MaterialsUniversity of Science and Technology BeijingBeijingChina

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