Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure
cadmium–zincoxide (CdZnO) interlayered metal–semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250 W illumination at 100 kHz, 500 kHz and 1 MHz frequencies, respectively. The effectuality of the frequency, applied voltage, illumination, and series resistance on the electrical parameters was discussed in detail. The increase in the frequency led to the decrement in capacitance and conductance and the increment in the illumination generally led to the increment in capacitance and conductance. An abnormal behavior was detected in the accumulation region of the C–V plots at 500 kHz and 1 MHz due to the inductive phenomenon of device. The effect of illumination intensity reduces the Ri values in the inversion region while enhances them in the depletion and accumulation region for 1 MHz. Additionally, the series resistance values decrease with increasing frequency due to the specific dispersion of localized interface states. As a consequence of the experimental results, a remarkable interaction was realized between the electrical parameters and the illumination, frequency and applied biases.
- 2.K. Kano, Semiconductor Devices (Prentice-Hall, Upper Saddle River, 1998)Google Scholar
- 7.M. Ortega, G. Santane, A. Morales-Acevedo, Superf. Vacio 9, 294 (1999)Google Scholar
- 15.S. Alialy, H. Tecimer, H. Uslu, Ş. Altındal, J. Nanomed. Nanotechnol. 4, 167–173 (2013)Google Scholar
- 30.E.H. Nicollian, J.R. Brews, Metal Oxide Semiconductor (MOS) Physics and Technology (Wiley, New York, 1982)Google Scholar