III-Nitride-based junction devices round contacts: effect of semiconductor film geometry and characteristics on the capacitance and conductance measurements
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A theoretical model was developed, which allows simulating the capacitance (C) and conductance/frequency (G/f) profiles as a function of operation frequencies for a round Schottky diode, and in terms of a transfer length concept, LT(jω), which depends on the electrical characteristics of AlGaN:Si semiconductor film, dimensions and structure Schottky diode. The (C) and (G/f) measurements were performed by applying a small electrical signal far away and parallel to the planar structure of junction device, due to the impossibility of accessing perpendicularly path, since the AlGaN:Si semiconductor film was deposited over a substrate of high electrical resistivity, just as it happens with the III nitrates materials. The (C) and (G/f) profiles were measured for operating frequencies ranging from 3 kHz to 1 MHz. Comparison of experimental measurements and theoretical model were analyzed. It was found that the structure Schottky and electrical characteristics of film plays an important role as a limiting factor in the (C) and (G/f) measurements at media and high operating frequencies.
The technical assistance of Elias Muñoz Merino, Ignacio Izpura and Moises Orduño-Gómez for sample preparation and characterization is thanked.
- 1.R. Quay, D. Schwantuschke, E. Ture, F.V. Raay, C. Friesicke, S. Krause, S. Müller, S. Breuer, B. Godejohann, P. Brückner, High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication. Phys. Status Solidi A 215, 1700655–1700662 (2018)CrossRefGoogle Scholar
- 3.C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z.R. Wasilewski, S. Porowski, AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy. Appl. Phys. Express 5, 022104 (2012)CrossRefGoogle Scholar