Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers

  • Shasha Jia
  • Xiaomin LiEmail author
  • Guanjie Li
  • Sijie Xie
  • Yongbo Chen


High-quality perovskite (111) BaTiO3 (BTO) ferroelectric thin films were epitaxially grown on wurtzite (0002) GaN substrates with the rationally designed SrTiO3 (STO)/TiN buffer layers by pulsed laser deposition. Particularly, TiN thin films with excellent conductivity could also be served as the bottom electrodes. The epitaxial relationship of the BTO/STO/TiN/GaN heterostructures was proved to be (111)[1\(\bar{1}\)0] BTO//(111)[1\(\bar{1}\)0] STO//(111)[1\(\bar{1}\)0] TiN//(0002)[11\(\bar{2}\)0] GaN by reflection high-energy electron diffraction and high resolution X-ray diffraction. Furthermore, the detailed interface structure and epitaxial relationship of the BTO/STO/TiN/GaN heterostructures were identified on atomic scale by high resolution transmission electron microscopy. The epitaxial (111) BTO ferroelectric thin films on GaN substrates exhibited the favorable ferroelectric properties with the remnant polarization of 12.97 μC cm−2. The high-quality epitaxial integration of perovskite BTO thin films on wurtzite GaN substrates could promote the potential applications in the advanced GaN-based integrated ferroelectric devices.



This work was supported by the National Natural Science Foundation of China Grant (Nos. 51572280 and 51602329), the National Key Research and Development Program of China (2016YFA0201103), and the Science Foundation for Youth Scholar of State Key Laboratory of High Performance Ceramics and Superfine Microstructures (No. SKL201603).

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Conflicts of interests

The authors declare that they have no conflicts of interest.

Supplementary material

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Supplementary material 1 (DOCX 74 kb)


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Authors and Affiliations

  1. 1.State Key Laboratory of High Performance Ceramics and Superfine MicrostructureShanghai Institute of Ceramics, Chinese Academy of ScienceShanghaiPeople’s Republic of China
  2. 2.Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of ScienceBeijingPeople’s Republic of China
  3. 3.University of Chinese Academy of ScienceBeijingPeople’s Republic of China

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