Thermoelectric properties of indium-doped zinc oxide sintered in an argon atmosphere
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Solid-state reaction (SSR) was used to synthesize samples of (Zn1–xInx)O, with x = 0.05, 0.02, 0.01, 0.005 and 0.00 respectively. All compositions were sintered in an argon atmosphere and their thermoelectric properties, phase constituents, and microstructures were investigated. Single-phase ceramic was formed for each composition with dense microstructure. In3+ doping lowered the electrical resistivity of ZnO and in the present study, lower value of electrical resistivity ρ ~ 1.884 mΩ·cm and highest power factor (P.F) ~ 4.660 × 10−4 WK−2 m−1 at 693.4 °C respectively are obtained for the composition with x = 0.02. The electrical resistivities (ρ) of all compositions were regulated. The tuned and regulated (ρ) are expected to be helpful for future thermoelectric devices.
The authors acknowledge the support by the Key Laboratory of Advanced Materials and State Key Laboratory of Crystal Materials, Shandong University. The financial support provided by the Government of P. R. China under the Fundamental Research Grant (No. 2015TB019), Jinan 250100, People’s Republic of China is also highly acknowledged. The help of professor Ikram Ullah Khan of Government Degree College Bakshali, Mardan, Mardan 23200, Khyber Pakhtunkhwa, Pakistan for his valuable discussion and English language improvements is also highly acknowledged.
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