Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 21, pp 18727–18732 | Cite as

Enhanced thermoelectric performance in p-type polycrystalline SnSe by Cu doping

  • Jiaran Li
  • Jingtao XuEmail author
  • Hongxiang Wang
  • Guo-Qiang Liu
  • Xiaojian Tan
  • Hezhu Shao
  • Haoyang Hu
  • Jun JiangEmail author


Polycrystalline Sn1−xCuxSe samples have been prepared using hot pressing to study the Cu doping effect on carrier concentration in SnSe. Different from Ag, Cu doping decreases the carrier concentration of SnSe at room temperature. The carrier concentration of Cu doped samples increases obviously with temperature, becomes larger than the pristine sample above 523 K, and approaches the values of Na doped SnSe at 773 K. The enhanced carrier concentration leads to better electrical conductivity, resulting in higher power factors at high temperatures. Due to carrier optimization by Cu, a peak ZT of 0.66 is achieved in Sn0.98Cu0.02Se at 813 K.



The authors thank K. Peng and Prof. X. Zhou at Chongqing University for the Hall measurement. This work was supported by the Natural Science Foundation of Zhejiang Province (LY18E020017, and LY18A040008), Zhejiang Provincial Science Fund for Distinguished Young Scholars (LR16E020001), and the National Key Research and Development Program of China (2017YFC0111602).


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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Ningbo Institute of Materials Technology and EngineeringChinese Academy of ScienceNingboChina
  2. 2.Nano Science and Technology InstituteUniversity of Science and Technology of ChinaSuzhouChina

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