Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 21, pp 18302–18310 | Cite as

A low temperature die attach technique for high temperature applications based on indium infiltrating micro-porous Ag sheet

  • Xingchi Xie
  • Chunjin Hang
  • Jianqiang Wang
  • Yue Su
  • Jie Ma
  • Qiang Guo
  • Hongtao ChenEmail author
  • Mingyu Li


A low-temperature die attach method based on In infiltrating micro-porous Ag sheet was proposed for high temperature power electronic applications. The bonding temperature was decreased down to 180 °C, reducing the thermal stress caused by coefficient of thermal expansion (CTE) mismatch between die and direct bonded copper (DBC). In the bonding process, the effect of In infiltrated the micro-porous Ag sheet was driven by capillary force. The high specific area of micro-porous Ag sheet accelerated the consumption of the low-melting-point In phase. The compositions evolution of the bondline was investigated. When reflowed at 200 °C for 10 min, the melting point of the bondline was increased to 660 °C due to the formation of Ag9In4. Moreover, after aging at 300 °C for 72 h, the melting point of the bondline was further increased to more than 695 °C, due to the formation of (Ag). Furthermore, shear tests at both room temperature (RT) and elevated temperatures were conducted. The shear strength of the samples reflowed at 200 °C for 10 min reached 40.2 MPa at RT. After aging at 300 °C for 168 h, the shear strengths reached 37.9, 26.2, 13.0 MPa at 300, 400, 500 °C, respectively. In addition, ductile features were observed in the fracture morphology of the aged samples. Vickers hardness dramatically dropped after initial aging and slowly decreased thereafter. The performance of the whole bondline turns to be more like a metal rather than intermetallic compounds (IMCs) with the aging process going on.



This work is financially supported by the Science and Technology Project of Shenzhen (No. JCYJ20160320095308401).


  1. 1.
    S.A. Paknejad, A. Mansourian, Y. Noh et al., Thermally stable high temperature die attach solution. Mater. Des. 89, 1310–1314 (2016)CrossRefGoogle Scholar
  2. 2.
    S. Nishino, J.A. Powell, H.A. Will, Production of large-area single-crystal wafers of cubic SiC for semiconductor devices. Appl. Phys. Lett. 5(42), 460–462 (1983)CrossRefGoogle Scholar
  3. 3.
    T. Hu, H. Chen, M. Li, Die attach materials with high remelting temperatures created by bonding Cu@Sn microparticles at lower temperatures. Mater. Des. 108, 383–390 (2016)CrossRefGoogle Scholar
  4. 4.
    Y.C. Liu, J. Teo, S.K. Tung et al., High-temperature creep and hardness of eutectic 80Au/20Sn solder. J. Alloy. Compd. 448, 340–343 (2008)CrossRefGoogle Scholar
  5. 5.
    C.L. Nico, Weyrich, Low temperature TLP bonding of Al2O3-ceramics using eutectic Au–(Ge, Si) alloys. J. Mater. Sci. 48, 7115–7124 (2013)CrossRefGoogle Scholar
  6. 6.
    T.A. Tollefsen, O.L. Vvik, K. Aasmundtveit et al., Effect of temperature on the die shear strength of a Au-Sn SLID bond. Metall. Mater. Trans. A 7(44), 2914–2916 (2013)CrossRefGoogle Scholar
  7. 7.
    C.C. Lee, W.W. So, High temperature silver-indium joints manufactured at low temperature. Thin Solid Films. 366, 196–201 (2000)CrossRefGoogle Scholar
  8. 8.
    G.O. Cook, C.D. Sorensen, Overview of transient liquid phase and partial transient liquid phase bonding. J. Mater. Sci. 46, 5305–5323 (2011)CrossRefGoogle Scholar
  9. 9.
    I. Tuah-Poku, M. Dollar, T.B. Massalski, A study of the transient liquid phase bonding process applied to a Ag/Cu/Ag sandwich joint. Metall. Trans. A 19, 675–687 (1988)CrossRefGoogle Scholar
  10. 10.
    H. Chen, T. Hu, M. Li et al., Cu@Sn core-shell structure powder preform for high-temperature applications based on transient liquid phase bonding. IEEE Trans. Pow Electron. 1(32), 441–451 (2017)CrossRefGoogle Scholar
  11. 11.
    K.Y. Cheong, V.R. Manikam, Die attach materials for high temperature applications: a review. IEEE Trans. Compon. Pack. Manuf Technol. 1(4), 457–477 (2011)CrossRefGoogle Scholar
  12. 12.
    J.G. Bai, J. Yin, Z. Zhang et al., High-temperature operation of SiC power devices by low-temperature sintered silver die-attachment. IEEE Trans. Adv. Pac. 3(30), 506–510 (2007)CrossRefGoogle Scholar
  13. 13.
    A. Hu, J.Y. Guo, H. Alariffi et al., Low temperature sintering of Ag nanoparticles for flexible electronics packaging. Appl. Phys. Lett. 97(15), 153117–153117 (2010)CrossRefGoogle Scholar
  14. 14.
    E. Ide, S. Angata, A. Hirose et al., Metal–metal bonding process using Ag metallo-organic nanoparticles. Acta Mater. 53, 2385–2393 (2005)CrossRefGoogle Scholar
  15. 15.
    C.A. Yang, S. Yang, X. Liu et al., Enhancement of nano-silver chip attachment by using transient liquid phase reaction with indium. J. Alloy. Compd. 762, 586–597 (2018)CrossRefGoogle Scholar
  16. 16.
    R. Riva, C. Buttay, B. Allard et al., Migration issues in sintered-silver die attaches operating at high temperature. Microelectron. Reliab. 53, 1592–1596 (2013)CrossRefGoogle Scholar
  17. 17.
    M. Kim, H. Nishikawa, Silver nanoporous sheet for solid-state die attach in power device packaging. Scripta Mater. 92, 43–46 (2014)CrossRefGoogle Scholar
  18. 18.
    M. Kim, H. Nishikawa, Effects of bonding temperature on microstructure, fracture behavior and joint strength of Ag nanoporous bonding for high temperature die attach. Mater Sci. Eng A. 645, 264–272 (2015)CrossRefGoogle Scholar
  19. 19.
    Q. Guo, S. Sun, Z. Zhang et al., Microstructure evolution and mechanical strength evaluation in Ag/Sn/Cu TLP bonding interconnection during aging test. Microelectron. Reliab. 80, 144–148 (2018)CrossRefGoogle Scholar
  20. 20.
    Q. Guo, F. Yu, H. Chen et al., Microstructure evolution during reflow and thermal aging in a Ag@Sn TLP bondline for high-temperature power devices. J. Mater. Sci. Mater. Electron. 29, 3014–3024 (2018)CrossRefGoogle Scholar
  21. 21.
    G. Humpston, D.M. Jacobson, Principles of Soldering (ASM International, Materials Park, Ohio, 2004)Google Scholar
  22. 22.
    C.E.T. White, H. Okamoto, Phase Diagrams of Indium Alloys and Their Engineering Applications (ASM International, Indium Corporation of America, Utica, NY, 1992)Google Scholar
  23. 23.
    D. Jendrzejczyk, K. Fitzner, Thermodynamic properties of liquid silver–indium alloys determined from e.m.f. measurements. Thermochim. Acta. 433, 66–71 (2005)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Xingchi Xie
    • 1
  • Chunjin Hang
    • 2
  • Jianqiang Wang
    • 1
  • Yue Su
    • 1
  • Jie Ma
    • 1
  • Qiang Guo
    • 1
  • Hongtao Chen
    • 1
    Email author
  • Mingyu Li
    • 1
  1. 1.Department of Materials Science and EngineeringHarbin Institute of TechnologyShenzhenChina
  2. 2.State Key Laboratory of Advanced Welding and JoiningHarbin Institute of TechnologyHarbinChina

Personalised recommendations