Effect of deposition time on sputtered ZnO thin films and their gas sensing application
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Nowadays, advanced industrialization and population growth have led to increasing the environmental related issues. This paper reports the effect of deposition time on ZnO films deposited on to the glass substrate by using rf magnetron sputtering technique and their further use for gas sensing applications. Herein, deposition time is considered to be changed from 300 s, 800 s (S1, S2). The thickness of deposited films lies in the range of 130–180 nm. The synthesized films were characterized by various techniques in terms of structural, morphological, optical and gas sensing properties. The typical crystal size of ZnO films was found to be in the range of 15–27 nm. FESEM analysis revealed the growth of nanospheres was lies in the range of 80–120 nm. Fourier transform infrared spectroscopy confirmed the ZnO bonding located at a wavelength of 430 cm−1. The average optical transmittance of the film was about 90–95% in the visible range. The optical band gap of ZnO films was decreased from 3.31 to 3.29 eV. The detailed characterization study showed 800 s is an optimum deposition time for good optoelectronic properties. For gas sensing application, highest sensitivity was obtained at operating temperature of 205 °C. Prepared films have a quick response and fast recovery time in the range of 128 s and 163 s respectively. These response and recovery time characteristics were explained by valence ion mechanism.
Authors are grateful to U.G.C, New Delhi for providing financial assistance for carrying out this project (F. No. 42-770/2013). Thanks due to the Director, R.S.I.C, Panjab University Chandigarh for providing SEM, XRD facility and IKGPTU Kapurthala for Research Cooperation.
- 5.H. Lin, S.M. Zhou, J.H. Zhou et al., Structural and optical properties of a-plane ZnO thin films synthesized on gamma-LiAlO(2) (302) substrates by low-pressure metal-organic chemical vapor deposition. Thin Solid Films 516, 6079–6082 (2008). https://doi.org/10.1016/j.tsf.2007.10.128 CrossRefGoogle Scholar
- 6.S. Bhatia, N. Verma, A. Mahajan, R.K. Bedi, Characterization of ZnO films based sensors prepared by different techniques. Appl. Mech. Mater. 772, 50–54 (2015). https://doi.org/10.4028/www.scientific.net/AMM.772.50 CrossRefGoogle Scholar
- 8.N.V. Kaneva, C.D. Dushkin, Preparation of nanocrystalline thin films of ZnO by sol-gel dip coating. Bulg. Chem. Commun. 43, 259–263 (2011)Google Scholar
- 15.R.O. Ndong, H.M. Omanda, P. Soulounganga, Effect of target to substrate distance on the rf magnetron sputtered ZnO thin films. Int. J. Mater. Sci. 17, 122–126 (2013)Google Scholar
- 16.M. Becerril, H. Silva-López, A. Guillén-Cervantes, O. Zelaya-Ángel, Aluminum-doped ZnO polycrystalline films prepared by co-sputtering of a ZnO-Al target. Rev. Mex. Fis. 60, 27–31 (2014)Google Scholar
- 21.S. Bhatia, N. Verma, R.K. Bedi, Varied sensing characteristics of in- doped ZnO films prepared by sol gel spin coating technique. Indian J Pure Appl Phys 13, 54–58 (2017)Google Scholar
- 24.S. Bhatia, N. Verma, R.K. Bedi, Effect of aging time on gas sensing properties and photocatalytic efficiency of dye on in-Sn co-doped ZnO nanoparticles. Mater. Res. Bull. (2016). https://doi.org/10.1016/j.materresbull.2016.12.011 CrossRefGoogle Scholar
- 29.B. Yuliarto, S. Julia, M. Iqbal, M.F. Ramadhani, N. Nugraha, et al (2015) The effect of tin addition to ZnO nanosheet thin films for ethanol and isopropyl alcohol sensor applications. J. Eng. Technol. Sci. 47:76–91. https://doi.org/10.5614/j.eng.technol.sci.2015.47.1.6 CrossRefGoogle Scholar
- 32.N.C. Net, E. Engineering, U. Teknologi et al., (2015) Study on doping effect of Sn doped ZnO thin films for gas sensing application. In IEEE Student Conference on Research and Development, pp. 435–440Google Scholar
- 33.B. Radha, R. Rathi. K.C. Lalithambika, A. Thayumanavan, K. Ravichandran. S. Sriram, Effect of Fe doping on the photocatalytic activity of ZnO nanoparticles: experimental and theoretical investigations. J. Mater. Sci.: Mater. Electron. 29, 13474–13482 (2018)Google Scholar