Multilevel resistive switching in Cu and Ag doped CBRAM device
A new type of memory device, based on Ag and Cu doped Ge2Se3 chalcogenide, was designed and investigated by a new method, referred to as “one pulse SET method”. The device shows multilevel resistance states. A resistance state between ON and OFF states was found with a wide range of bias. The multilevel resistance behavior could be caused by the formation and dissolution of Ag and Cu filaments. The energy-dispersive X-ray spectroscopy mapping and scanning electron microscope results prove the distribution of Cu and Ag elements in the film.
The authors thank to the project of the Ministry of Education, Youth and Sports, CR, Grant LM2015082 Center of Materials and Nanotechnologies and to the project Czech Technological Agency in project GAMA (Grant No. GAMA02/011) for financial support.
- 3.M. Kund, G. Beitel, C.-U. Pinnow, T. Rohr, J. Schumann, R. Symanczyk, K. Ufert, G. Muller, Proc. IEEE Int. Electron Devices Meet. 754 (2005)Google Scholar
- 10.C. Schindler, M. Meier, R. Waser, M.N. Kozicki, Non-Volatile Memory Technology Symposium, NVMTS’07, p. 82 (2007)Google Scholar
- 17.B. Zhang, V. Prokop, L. Strizik, Z. Vitezslav, Chalcogenide Lett. 14, 291 (2017)Google Scholar