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Multilevel resistive switching in Cu and Ag doped CBRAM device

  • Bo Zhang
  • Vitezslav Zima
  • Tomas Mikysek
  • Veronika Podzemna
  • Pavel Rozsival
  • Tomas Wagner
Article
  • 74 Downloads

Abstract

A new type of memory device, based on Ag and Cu doped Ge2Se3 chalcogenide, was designed and investigated by a new method, referred to as “one pulse SET method”. The device shows multilevel resistance states. A resistance state between ON and OFF states was found with a wide range of bias. The multilevel resistance behavior could be caused by the formation and dissolution of Ag and Cu filaments. The energy-dispersive X-ray spectroscopy mapping and scanning electron microscope results prove the distribution of Cu and Ag elements in the film.

Notes

Acknowledgements

The authors thank to the project of the Ministry of Education, Youth and Sports, CR, Grant LM2015082 Center of Materials and Nanotechnologies and to the project Czech Technological Agency in project GAMA (Grant No. GAMA02/011) for financial support.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Bo Zhang
    • 1
  • Vitezslav Zima
    • 2
  • Tomas Mikysek
    • 3
  • Veronika Podzemna
    • 4
  • Pavel Rozsival
    • 5
  • Tomas Wagner
    • 1
    • 4
  1. 1.Department of General and Inorganic Chemistry, Faculty of Chemical TechnologyUniversity of PardubicePardubiceCzech Republic
  2. 2.Institute of Macromolecular Chemistry AS CRPrague 6Czech Republic
  3. 3.Department of Analytical Chemistry, Faculty of Chemical TechnologyUniversity of PardubicePardubiceCzech Republic
  4. 4.Center of Materials and Nanotechnologies, Faculty of Chemical TechnologyUniversity of PardubicePardubiceCzech Republic
  5. 5.Department of Electrical Engineering, Faculty of Electrical Engineering and InformaticsUniversity of PardubicePardubiceCzech Republic

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