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Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 17, pp 15223–15232 | Cite as

Printed wire interconnection using Ag sinter paste for wide band gap power semiconductors

  • Seungjun Noh
  • Chanyang Choe
  • Chuantong Chen
  • Hao Zhang
  • Katsuaki Suganuma
Article
  • 80 Downloads

Abstract

This study reports a novel high-temperature and high-current wire interconnection by printing Ag sinter paste for WBG semiconductor power devices. The Ag sinter paste wire interconnection (APW) was successfully fabricated connecting two Cu electrodes coated by Ag. Both the high-temperature reliability and the high-current reliability of the APW were evaluated by aging test at 250 °C for 1000 h and by electro-migration (EM) test at 2.2 × 104 A/cm2 for 2000 h. In the aging, a resistivity of about 4.1 × 10−6 Ω cm was achieved, which further decreased to 3.4 × 10−6 Ω cm after aging for 1000 h. This reduction can be attributed to further sintering of the sintered Ag network. The initial shear strength was 17 MPa, which, while high enough, was maintained even after an aging test of 1000 h. In the EM test, the resistance of APW was not changed significantly up to 1000 h and then only slightly increased at 2000 h. This only slight change in resistance demonstrates greater stability than that of conventional wire interconnection material such as Al and Cu under high temperature and high current density. The influence of EM on the interface between APW and a Cu substrate was observed by scanning electron microscopy with EDX. The change of resistance of the APW was induced by the formation of Cu oxide at a cathode side, which leads to a crack extension along the interface between APW and a Cu substrate. Thus, the results obtained in the present work show the APW as a promising new alternative to wire bonding technology for WBG power electronic devices.

Notes

Acknowledgements

This work was supported by the JST Advanced Low Carbon Technology Research and Development Program (ALCA) project “Development of a high frequency GaN power module package technology” (Grant No. JPMJAL1610).

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Seungjun Noh
    • 1
    • 2
  • Chanyang Choe
    • 1
    • 2
  • Chuantong Chen
    • 2
  • Hao Zhang
    • 2
  • Katsuaki Suganuma
    • 2
  1. 1.Department of Adaptive Machine Systems, Graduate School of EngineeringOsaka UniversityOsakaJapan
  2. 2.The Institute of Scientific and Industrial ResearchOsaka UniversityOsakaJapan

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