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Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 17, pp 15156–15162 | Cite as

ZnO based transparent thin film transistor grown by aerosol assisted CVD

  • Vipin K. Kaushik
  • C. Mukherjee
  • P. K. Sen
Article
  • 56 Downloads

Abstract

The communication reports the characterization of n\(^+\)-Al:ZnO/Al\(_2\)O\(_3\)/n-ZnO thin film transistors (TFTs) developed by using an indigenously designed low-cost aerosol assisted chemical vapour deposition (AACVD) system. UV–VIS spectroscopy yields the bandgap energies of ZnO and Al:ZnO thin films as 3.30 and 3.34 eV, respectively. The average optical transmittance of the TFT is found to be around 77%. The TFT has a double top gate structure with Al:ZnO thin film as gate, source and drain terminals, ZnO thin film as channel layer while Al\(_2\)O\(_3\) acts as the dielectric layer. Transfer and output characteristics of the TFT have been measured to study the variation of threshold voltage, current On/Off ratio, saturation field effect mobility and subthreshold swing parameters as functions of drain-to-source voltage. The present work establishes the good quality indigenous fabrication of p-channel TFT using AACVD system with results agreeing very well with the results available in the literature.

Notes

Acknowledgements

Several discussions with Dr. Tapas Ganguli of Raja Ramanna Center for Advanced technology, Indore-India are gratefully acknowledged.

References

  1. 1.
    A. Janotti, C. Walle, Fundamentals of zinc oxide as a semiconductor. Rep. Prog. Phys. 72, 126501-1-126501-29 (2009)Google Scholar
  2. 2.
    Ü. Özgür, U. Alivov, Ya. Liu, C. Teke, A. Reshchikov, M. Doan, S. Avrutin, V. Cho, S. Morkoç, A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 041301–04131-3 (2005)CrossRefGoogle Scholar
  3. 3.
    C.Y. Liu, H.Y. Xu, Y. Sun, J.G. Ma, Y.C. Liu, ZnO ultraviolet random laser diode on metal copper substrate. Opt. Express. 22(14), 16731-1-16731-7 (2014)Google Scholar
  4. 4.
    W.T. Chen, H.W. Zan, High-performance light-erasable memory and real-time ultraviolet detector based on unannealed indium-gallium-zinc-oxide thin-film transistor. IEEE Electron Device Lett. 33(1), 77–79 (2012)CrossRefGoogle Scholar
  5. 5.
    N.L. Dehuff, E.S. Kettenring, D. Hong, H.Q. Chiang, J.F. Wager, R.L. Hoffman, C.H. Park, D.A. Keszler, Transparent thin-film transistors with zinc indium oxide channel layer. J. Appl. Phys. 97, 064505-1–064505-5 (2005)CrossRefGoogle Scholar
  6. 6.
    L. Zhang, J. Li, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, High-performance ZnO thin film transistors with sputtering SiO\(_2\)/Ta\(_2\)O\(_5\)/SiO\(_2\) multilayer gate dielectric. Thin Sol. Films 518(21), 6130–6133 (2010)CrossRefGoogle Scholar
  7. 7.
    R.S. Chen, W. Zhou, M. Zhang, M. Wong, H.S. Kwok, Self-aligned top-gate InGaZnO thin film transistors using SiO\(_2\)/Al\(_2\)O\(_3\) stack gate dielectric. Thin Sol. Films 548, 572–575 (2013)CrossRefGoogle Scholar
  8. 8.
    P.K. Nayak, Z. Wang, D.H. Arijum, M.N. Hedhili, H.N. Alshareef, Highly stable thin film transistors using multilayer channel structure. Appl. Phys. Lett. 106, 103505-1–103505-4 (2015)CrossRefGoogle Scholar
  9. 9.
    L. Huang, D. Han, Z. Chen, Y. Cong, J. Wu, N. Zhao, J. Dong, F. Zhao, L. Liu, S. Zhang, X. Zhang, Y. Wang, Flexible nickel-doped zinc oxide thin-film transistors fabricated on plastic substrates at low temperature. Jpn. J. Appl. Phys. 54(4S), 04DJ07 (2015)Google Scholar
  10. 10.
    W. Wang, D. Han, J. Cai, Y. Geng, L. Wang, Y. Tian, X. Zhang, Y. Wang, S. Zhang, Fully transparent Al-doped ZnO thin-film transistors on flexible plastic substrates. Jpn. J. Appl. Phys. 52(4S), 04CF10 (2013)Google Scholar
  11. 11.
    Y. Cong, D. Han, J. Wu, N. Zhao, Z. Chen, F. Zhao, J. Dong, S. Zhang, X. Zhang, Y. Wang, Studies on fully transparent Al-Sn-Zn-O thin-film transistors fabricated on glass at low temperature. Jpn. J. Appl. Phys. 54(4S), 04DF01 (2015)Google Scholar
  12. 12.
    T.H. Hwang, I.S. Yang, O.K. Kwon, M.K. Ryu, C.W. Byun, C.S. Hwang, S.H.K. Park, Inverters using only N-type indium gallium zinc oxide thin Film transistors for flat panel display applications. Jpn. J. Appl. Phys. 50(3S), 03CB06 (2011)Google Scholar
  13. 13.
    A. Manor, E.A. Katz, T. Tromholt, F.C. Krebs, Enhancing functionality of ZnO hole blocking layer in organic photovoltaics. Sol. Energy Mater. Sol. Cells 98, 491–493 (2012)CrossRefGoogle Scholar
  14. 14.
    J.I. Ramirez, Y.N. Li, H. Basantani, K. Leedy, B. Bayraktaroglu, G.H. Jessen, T.N. Jackson, Radiation hard ZnO thin film transistor. IEEE Trans. Nucl. Sci. 62(3), 1399–1404 (2015)CrossRefGoogle Scholar
  15. 15.
    J. Li, J.H. Zhang, X.W. Dinga, W.Q. Ahu, X.Y. Jiang, Z.L. Zhang, A strategy for performance enhancement of HfInZnO thin film transistors using a double-active-layer structure. Thin Sol. Films 562, 592–596 (2014)CrossRefGoogle Scholar
  16. 16.
    J. Li, J.H. Zhang, X.W. Dinga, W.Q. Ahu, X.Y. Jiang, Z.L. Zhang, A strategy for performance enhancement of HfInZnO thin film transistors using a double-active-layer structure. Thin Sol. Films 562, 592–596 (2014)CrossRefGoogle Scholar
  17. 17.
    V.K. Kaushik, C. Mukherjee, T. Ganguli, P.K. Sen, Material characterizations of Al:ZnO thin films grown by aerosol assisted chemical vapour deposition. J. Alloys Compd. 689, 1028–1036 (2016)CrossRefGoogle Scholar
  18. 18.
    V.K. Kaushik, C. Mukherjee, T. Ganguli, P.K. Sen, Electrical and optical characteristics of aerosol assisted CVD grown ZnO based thin film diode and transistor. J. Alloys Compd. 696, 727–735 (2017)CrossRefGoogle Scholar
  19. 19.
    P.F. Carcia, R.S. Mclean, M.H. Reilly, G. Nunes, Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Appl. Phys. Lett. 82(7), 1117–1119 (2003)CrossRefGoogle Scholar
  20. 20.
    R. Navamathavan, J. Lim, D. Hwang, B. Kim, J. Oh, J. Yang, H. Kim, S. Park, Thin-film transistors based on ZnO fabricated by using radio-frequency magnetron sputtering. J. Korean Phys. Soc. 48(2), 271–274 (2006)Google Scholar
  21. 21.
    A. Alias, K. Hazawa, N. Kawashima, H. Fukuda, K. Uesugi, Fabrication of ZnO thin-film transistors by chemical vapor deposition method using zinc acetate solution. Jpn. J. Appl. Phys. 50(1S2), 01BG05 (2011)Google Scholar
  22. 22.
    M.A.D. Jimenez, F.F. Gracia, A.L. Flores, J.M. Juáreza, J.A.L. López, S.A. Iniesta, P.R. Quintero, C.R. Betanzo, Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis. Rev. Mex. Fis. 61, 23–126 (2015)Google Scholar
  23. 23.
    B. Bayraktaroglu, K. Leedy, Pulsed laser deposited ZnO for thin film transistor applications. ECS Trans. 16(12), 61–63 (2008)CrossRefGoogle Scholar
  24. 24.
    S.W. Cho, C.H. Ahn, M.G. Yun, S.H. Kim, H.K. Cho, Effects of growth temperature on performance and stability of zinc oxide thin film transistors fabricated by thermal atomic layer deposition. Thin Sol. Films 562, 597–602 (2014)CrossRefGoogle Scholar
  25. 25.
    E.J. Kim, J.Y. Bak, J.S. Choi, S.M. Yoon, Effect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications. J. Vac. Sci. Technol. B 32(2), 041202 (2014)Google Scholar
  26. 26.
    R. Swanepoel, Determination of the thickness and optical constants of amorphous silicon. J. Phys. E: Sci. Instr. 16, 1214–1222 (1983)CrossRefGoogle Scholar
  27. 27.
    L.C.K. Liau, T.H. Hsu, P.H. Lo, Characterizing p-channel thin film transistors using ZnO/hydrated polyvinyl alcohol as the conducting channel. Appl. Phys. Lett. 105, 063509 (2014)CrossRefGoogle Scholar
  28. 28.
    S.M. Sze, Physics of semiconductor devices, 2\(^{nd}\) ed.”, Wiley Eastern Limited, New Delhi, pp. 492-493, (1983)Google Scholar
  29. 29.
    R.L. Hoffman, in Zinc oxide: bulk, thin films and nanostructures, ed. by C. Jagadish, S.J. Pearton (Elsevier, Amsterdam, 2006), pp. 415-442Google Scholar
  30. 30.
    J.B. Kim, C.F. Hernandez, W.J. Potscavage, X.H. Zhang, B. Kippelena, Low-voltage InGaZnO thin-film transistors with Al\(_2\)O\(_3\) gate insulator grown by atomic layer deposition. Appl. Phys. Lett. 94, 142107 (2009)CrossRefGoogle Scholar
  31. 31.
    N.L. Dehuff, E.S. Kettenring, D. Hong, H.Q. Chiang, J.F. Wager, R.L. Hoffman, C.H. Park, D.A. Keszler, Transparent thin-film transistors with zinc indium oxide channel layer. Appl. Phys. Lett. 97, 064505 (2005)Google Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Applied Physics & OptoelectronicsShri G. S. Institute of Technology and ScienceIndoreIndia
  2. 2.Optical Coatings Development Laboratory, RRCATIndoreIndia
  3. 3.Homi Bhabha National Institute, Training School ComplexMumbaiIndia

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