Investigation of C60 and C70 fullerenes under low energy ion impact
- 40 Downloads
The increasing need of fullerenes due to its interesting properties makes it a unique molecule of the current research field. The replacement of fullerene C60 by C70 in various applications makes us to feel more intended towards the knowledge of its structural and optical behaviour under various perturbations. In the present study, the stability of fullerenes (C60 and C70) under low energy ion irradiation is investigated. Both C60 and C70 fullerene thin films were grown on glass substrate and bombarded with 2.4 MeV Ar ions at different fluences ranging from 1 × 1013 to 3 × 1016 ions/cm2. The surface morphology and topology of these films were studied by scanning electron microscopy and atomic force microscopy. The microscopic analysis shows the increase in roughness at low fluence and then roughness decreases at high fluences. At the highest fluence, the roughness of both C60 and C70 becomes equal. Various spectroscopic analysis conducted on irradiated fullerene C60 and C70 thin films show that the bandgap decreases with the increase in fluence. In case of C70 bandgap decreases to 1.6 eV which gives more allowed HOMO–LUMO transitions as compared to fullerene C60. This decrease in bandgap tends to increase the conductivity of the fullerene molecule, hence I–V measurements were performed which shows the decrease in the resistivity of both the fullerene thin films. Raman spectrum reveals the transformation of ball shaped fullerenes into amorphous carbon at higher fluences. The different vibrations in the fullerene molecule are also studied by FTIR spectroscopy. These characteristic traits of both the fullerene are studied giving the idea of the local structure and optical behaviour of the molecule as a matrix component in the metal-matrix nanocomposites.
The authors are thankful to the staff of Low Energy Ion Beam Facility at Inter University Accelerator Centre, New Delhi for providing us the stable ion beam. Authors are thankful to Materials Research Centre (MRC), MNIT, Jaipur for providing experimental characterization facilities. R. Singhal and Jyotsna Bhardwaj are also thankful to CSIR New Delhi (Ref: 03(1408)/17/EMR-II) and DST New Delhi (EMR/2016/005208) for their financial support to carry out the experimental research work. The help of Ms. Pooja Sharma (PhD scholar, MNIT Jaipur) during synthesis of films and Mr. Kedar Nath at LEIBF facility, IUAC New Delhi during irradiation of films is also acknowledged. Jyotsna Bhardwaj acknowledges the fellowship from IUAC New Delhi (UFR-62303).
Compliance with ethical standards
Conflict of interest
On behalf of all authors, the corresponding author states that there is no conflict of interest.
- 5.G. Höhler, J.H. Kühn, T. Müller, J. Trümper, A. Ruckenstein, P. Wölfle, Springer Tracts in Modern Physics Managing Editor Elementary Particle Physics, Editors Solid-State Physics, Editors (n.d.)Google Scholar
- 7.M. Randi, D. Vuki 79, 471 (2006)Google Scholar
- 8.E. Ulloa, Introduction to Nanotechnology, vol. 1, EEE-5425 (2013)Google Scholar
- 13.R. Singhal, D.C. Agarwal, Y.K. Mishra, F. Singh, J.C. Pivin, R. Chandra, D.K. Avasthi, J. Phys. D 42, (2009)Google Scholar
- 25.L. Thomé, A. Debelle, F. Garrido, S. Mylonas, B. Décamps, C. Bachelet, G. Sattonnay, S. Moll, S. Pellegrino, S. Miro, P. Trocellier, Y. Serruys, G. Velisa, C. Grygiel, I. Monnet, M. Toulemonde, P. Simon, J. Jagielski, I. Jozwik-Biala, L. Nowicki, M. Behar, W.J. Weber, Y. Zhang, M. Backman, K. Nordlund, F. Djurabekova, Nucl. Instrum. Methods Phys. Res. B 307, 43 (2013)CrossRefGoogle Scholar
- 35.M.S. Amer, Raman Spectroscopy, Fullerenes and Nanotechnology (RSC Publishing, Cambridge, 2010)Google Scholar
- 42.M. Fan, D. Dai, B. Huang, Fourier Transform Mater. Anal. 3, 45 (2012)Google Scholar
- 43.J. Page, J. Menendez, Light Scattering in Solids VIII (Springer, Berlin, 2000), p. 27Google Scholar
- 44.L.E. Amand, C.J. Tullin, The Theory Behind FTIR Analysis, vol. 1 (Department of Energy Conversion, Chalmers University of Technology, Sweden, 1999)Google Scholar
- 45.P. Beauchamp, Course Notes 2620, 19 (2010)Google Scholar