Microstructure, optical and electrical properties of Bi and Ba co-doped K0.52Na0.48NbO3 transparent ceramics
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A new Bi and Ba co-doped K0.52Na0.48NbO3 transparent ceramics were synthesized by using solid-state reaction method. Their microstructure, optical and electrical properties were studied. The results show that the obtained compact ceramic has a perovskite polycrystalline structure with cubic phase. Refinement on the crystalline structure shows that the Bi and Ba co-doping results in forming an interstitial solid solution in K0.52Na0.48NbO3 ceramic. An appropriate amount of Bi and Ba co-doping is helpful for improving the transparency and densification of the ceramics. The most transparency of the samples reaches a high value of about 60% in the near-IR region. The dielectric constant–temperature spectrum shows that with increasing the Bi and Ba content the dielectric constant–temperature transition peaks become to be more flat. The complex impedance plots exhibit two impedance semicircles identified within the frequency range of 1 kHz–1 MHz for all samples, which is explained by the grain and grain boundary effects. The presence of non-Debye type of relaxation has been observed by a complex impedance analysis.
The authors gratefully acknowledge technical assistance from Mr. Lin Li, Mr. Yusong Du and others at Guilin University of Electronic Technology. This work was supported by National Natural Science Foundation of China (61571142, 51562004, 51102056), Guangxi Natural Science Outstanding Youth Foundation (2016GXNSFFA380007), Guangxi Natural Science Foundation (2015GXNSFAA139276, 2016GXNSFGA380001), Guangxi Key Laboratory of Information Materials (Guilin University of Electronic Technology, Project No. 171004-Z) and Innovation Project of GUET Graduate Education.
- 5.M.H. Jiang, G.Q. Zhao, Z.F. Gu, G. Cheng, X.Y. Liu, L. Li, J. Mater. Sci.: Mater. Electron. 26, 9366 (2015)Google Scholar
- 9.H. Jiang, Y.K. Zou, Q. Chen, K.K. Li, R. Zhang, Y.P. Wang, SPIE 5644, 380 (2005)Google Scholar
- 17.W. Ge, Y. Zhang, J. Zhang, C.P. Devreugd, J. Li, D. Viehland, J. Appl. Phys. 111, 84 (2012)Google Scholar
- 24.A. Niemer, R. Pankrath, K. Betzler, M. Burianek, M. Muehlberg, J. Phys.: Condens. Mater. 2, 80 (2012)Google Scholar
- 31.Z.M. Geng, K. Li, D. Shi, L. Zhang, X. Shi, J. Mater. Sci.: Mater. Electron. 26, 6769 (2015)Google Scholar