Local structure and magnetic properties of Mn and Co co-doped SiC films

  • Xianke Sun
  • Shaofeng Li
  • Gaoliang Wang
  • Jitao Li
  • Kuili LiuEmail author
  • Liuyang XuEmail author


Mn and Co co-doped SiC films were deposited on Si substrates by magnetron sputtering technique. The structure and magnetism of the films were investigated systematically. X-ray diffraction and X-ray photo-electron spectroscopy clearly show that the films are composed of 3C-SiC, in which Mn atoms substitute for the C sites of SiC lattice and Co atoms form CoSi compounds. The valence analysis displays that Mn and Co elements exist in the form of Mn2+ and Co2+ ions in the films, respectively. The magnetic analysis indicates that the films are ferromagnetic at room-temperature and the saturation magnetization increases with increasing Mn substitution concentration. There are two ferromagnetic phases in the films, the Curie temperature at 240 K is associated with CoSi nanoparticles, while the Curie temperature observed above 300 K come from Mn substitution and some extended defects. These features reveal that the room-temperature ferromagnetism of Mn and Co co-doped SiC films is intrinsic property of the material.



This work was supported by the National Natural Science Foundation of China (11604395), Program for Science & Technology Innovation Talents in Universities of Henan Province (18HASTIT032),the Natural Science Foundation of Henan Province of China (182300410271) and Program for Science & Research Innovation Foundation of Zhoukou Normal University (ZKNUA201803).


  1. 1.
    T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science 287, 1019 (2000)CrossRefGoogle Scholar
  2. 2.
    M.A. Fraga, M. Massi, I.C. Oliveira et al., J. Mater. Sci. Mater. Electron. 19, 835 (2008)CrossRefGoogle Scholar
  3. 3.
    X. Su, Y. Jia, J. Wang et al., J. Mater. Sci. Mater. Electron. 24, 1905 (2013)CrossRefGoogle Scholar
  4. 4.
    M. Hajiaboutalebi, M. Rajabi, O. Khanali, J. Mater. Sci. Mater. Electron. 28, 1 (2017)CrossRefGoogle Scholar
  5. 5.
    S. Lin, Z. Chen, B. Liu et al., J. Mater. Sci. Mater. Electron. 21, 326 (2010)CrossRefGoogle Scholar
  6. 6.
    E.P. Simonenko, N.P. Simonenko, M.A. Zharkov et al., J. Mater. Sci. 50, 733 (2015)CrossRefGoogle Scholar
  7. 7.
    S. Gambaro, F. Valenza, M.L. Muolo et al., J. Mater. Sci. 52, 13414 (2017)CrossRefGoogle Scholar
  8. 8.
    J. Kuang, P. Jiang, W. Liu, W. Cao, Appl. Phys. Lett. 106, 212903 (2015)CrossRefGoogle Scholar
  9. 9.
    H. Zheng, Z. Wang, X. Liu, C. Diao, H. Zhang, Y. Gu, Appl. Phys. Lett. 99, 222512 (2011)CrossRefGoogle Scholar
  10. 10.
    M.L. Diallo, L. Diallo, A. Fnidiki et al., J. Appl. Phys. 122, 083905 (2017)CrossRefGoogle Scholar
  11. 11.
    X. Sun, X. Jin, S. Wang, H. Liu, P. Sun, Y. An, R. Guo, J. Liu, J. Vac. Sci. Technol. A 31, 061511 (2013)CrossRefGoogle Scholar
  12. 12.
    X. Li, C. Xia, G. Pei, X. He, J. Phys. Chem. Solids 68, 1836 (2007)CrossRefGoogle Scholar
  13. 13.
    S. Suzuki, T. Miyata, M. Ishii, T. Minami, Thin Solid Films. 434, 14 (2003)CrossRefGoogle Scholar
  14. 14.
    J.M.D. Coey, P. Stamenov, R.D. Gunning, New J. Phys. 12, 053025 (2010)CrossRefGoogle Scholar
  15. 15.
    P.H. Shi, R.J. Su, F.Z. Wan, M.C. Zhu, D.X. Li, S.H. Xu, Appl. Catal. B 123, 265 (2012)CrossRefGoogle Scholar
  16. 16.
    Q. Yan, X. Li, Q. Zhao, G. Chen, J. Hazard. Mater. 209, 385 (2012)CrossRefGoogle Scholar
  17. 17.
    P. Tanner, L. Wang, S. Dimitrijev, J. Han, A. Iacopi, L. Hold, G. Walker, Sci. Adv. Mater. 6, 1542 (2014)CrossRefGoogle Scholar
  18. 18.
    L.W. Yang, X.L. Wu, G.S. Huang, T. Qiu, Y.M. Yang, J. Appl. Phys. 97, 014308 (2005)CrossRefGoogle Scholar
  19. 19.
    X. Sun, R. Guo, Y. An, J. Liu, J. Vac. Sci. Technol. A 31, 041507 (2013)CrossRefGoogle Scholar
  20. 20.
    P.T. Ma, T.M. Lei, Y.M. Zhang, J.J. Liu, Z.Y. Zhang, Adv. Mater. Res. 709, 197 (2013)CrossRefGoogle Scholar
  21. 21.
    B. Huang, H.J. Xiang, S.H. Wei, Phys. Rev. B: Condens. Matter 83, 1127 (2011)Google Scholar
  22. 22.
    Y. Liang, S. Yu, C. Hsin, C. Huang, W. Wu, J. Appl. Phys. 110, 074302 (2011)CrossRefGoogle Scholar
  23. 23.
    T.K. Liu, C.T. Lee, S.H. Chiou et al., Nanotechnology 26, 065707 (2015)CrossRefGoogle Scholar
  24. 24.
    H.W. Zheng, Z.Q. Wang, X.Y. Liu, C.L. Diao, H.R. Zhang, Y.Z. Gu, Appl. Phys. Lett. 99, 222512 (2011)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.School of Physics and Telecommunication EngineeringZhoukou Normal UniversityZhoukouChina

Personalised recommendations