Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique
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We have successfully synthesized p-type Cu3(Sb1−xInx)Se4 thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical transport properties. Thin films shows enhancement in figure of merit (ZT) with increasing In(III) content. The maximum ZT 0.267 obtained for Cu3(Sb0.92In0.08)Se4 thin film at 300 K.
One of the authors VBG is thankful to Department of Chemistry, Yashwantrao Chavan Institute of Science, Satara. This research work was supported by Basics Science Research Program through the National Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2014R1A2054051). This work was also supported by Korea Research Fellowship Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2016H1D3A1909289) for an outstanding overseas young researcher (Dr. Sawanta S. Mali).
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