Microstructure, ferroelectric and optical properties of lead free (1 − x)BiFeO3–xBi(Zn0.5Ti0.5)O3 thin films
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(1 − x)BiFeO3–xBi(Zn0.5Ti0.5)O3 ((1 − x)BFO–xBZT, x = 0, 0.2, 0.3, 0.4, 0.5, 0.6) thin films were deposited successfully on Pt(111)/Ti/SiO2/Si(100) and quartz substrates by sol–gel technique. Effects on the structural, electrical and optical properties have been investigated. According to the X-ray diffraction patterns, it could be revealed that a phase transition occurred from rhombohedral structure to pseudocubic structure. Highly (024) and (211)-oriented (1 − x)BFO–xBZT thin films were formed on Pt(111)/Ti/SiO2/Si(100) substrates. The atomic force microscope showed that all the samples had uniform morphology and the grain size became smaller obviously with the Bi(Zn0.5Ti0.5)O3 content increased. The electrical and ferroelectric tests showed that 0.6BFO–0.4BZT thin film had the lowest leakage current densities (2.02 × 10−8 A/cm2 at 300 kV/cm) and the best ferroelectric hysteresis loops with remanent polarization intensity 2Pr = 19.96 µC/cm2 at 400 kV/cm. The absorption edges of (1 − x)BFO–xBZT thin films were blue-shift and the band gaps became larger with the increasing of x value.
This work is supported by the National Natural Science Foundation of China under Grant No. 61172027, Guangdong Natural Science Foundation under Grant No. 2014A030311049 and the Science and Technology Planning Project of Guangdong Province (2017A010103035).
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