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Microstructure and thermoelectric properties of In2O3/ITO thin film thermocouples with Al2O3 protecting layer

  • Yantao Liu
  • Wei Ren
  • Peng Shi
  • Dan Liu
  • Yijun Zhang
  • Ming Liu
  • Qijing Lin
  • Bian Tian
  • Zhuangde Jiang
Article
  • 18 Downloads

Abstract

In2O3/ITO thin film thermocouples (TFTCs) with alumina protecting layer were fabricated on alumina substrates. The effects of protecting layer on their performance at higher temperature and long term service were investigated accordingly. In2O3 and ITO thin films were prepared by radio frequency magnetron sputtering methods, while the alumina protecting layer was prepared by traditional spin-coating methods. Microstructural and thermoelectric properties of the In2O3/ITO TFTCs with and without alumina (Al2O3) protecting layer were investigated as a function of sintering time from 2 to 10 h at 1250 °C. The results show that, the existence of alumina protecting layer can effectively increase the performance capabilities of thermocouples at high temperatures by inhibiting the volatilization of the thin film. In2O3/ITO TFTCs with protecting layer can work normally over 10 h at 1250 °C while Seebeck coefficient is 131.7 µV/°C. The drift rate can reach 3.05 °C/h, which is much better than those without protecting layer.

Notes

Acknowledgements

This work was financial supported by the National Key Basic Research Program of China granted No. 2015CB057402 and 111 Project of China (B14040). We also appreciate the support from the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Yantao Liu
    • 1
    • 3
  • Wei Ren
    • 1
  • Peng Shi
    • 1
  • Dan Liu
    • 1
  • Yijun Zhang
    • 1
  • Ming Liu
    • 1
  • Qijing Lin
    • 2
  • Bian Tian
    • 2
  • Zhuangde Jiang
    • 2
  1. 1.Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’anChina
  2. 2.International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, School of Mechanical EngineeringXi’an Jiaotong UniversityXi’anChina
  3. 3.Department of Electronic EngineeringXi’an University of TechnologyXi’anChina

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