Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature
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In this paper, bottom-gate top-contact thin film transistors (TFTs) with a double active layer of InZnO:N/InZnSnO (IZO:N/IZTO) were successfully prepared. The IZO:N/IZTO thin films were deposited on SiO2/p-Si substrates by radio frequency (RF) magnetron sputtering at room temperature. The transmittance of both the IZO:N thin film and the IZTO thin film were more than 80% in the range of visible light. The IZO:N thin film and the IZTO thin film were found to be amorphous at the annealing temperature of 325 °C by means of X-ray diffraction (XRD). The double active layer IZO:N/IZTO TFT exhibited good electrical performance with a saturation mobility of 41.5 cm2 V−1 s−1, an on/off current ratio of 2.88 × 105, and a threshold voltage of 1.0 V, which achieved high mobility at the low annealing temperature of 325 °C.
This work was supported by the National Natural Science Foundation of China (Grant Nos. 51772019 and 51372016).