Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method

  • V. V. AtuchinEmail author
  • M. S. Lebedev
  • I. V. Korolkov
  • V. N. Kruchinin
  • E. A. Maksimovskii
  • S. V. Trubin


The optical quality HfxTi1−xO2 films with a wide range of the Hf/Ti ratio were prepared on Si (100) substrates by the ALD method with the use of tetrakis(ethylmethylamido)hafnium(IV) (Hf(NC2H5CH3)4, TEMAH) and titanium(IV) chloride TiCl4 as Hf and Ti precursors, respectively. The H2O vapor was applied as oxygen source. The structural properties of the as-deposited and annealed films were evaluated by the XRD analysis. The Hf/Ti ratio in the films was measured by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of E = 1.12–4.96 eV. The specific growth kinetics is observed for 0 < x < 1. The optical constants wide-range tuning is reached in the HfxTi1−xO2 (x = 0–1) films via the chemical composition variation and annealing.



The NIIC team works according to the Government Assignment No. V.45.1.5. The reported study was funded by RFBR according to the research project 16-52-48010 and 17-52-53031.

Supplementary material

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Supplementary material 1 (DOCX 242 KB)


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Authors and Affiliations

  1. 1.Laboratory of Optical Materials and StructuresInstitute of Semiconductor Physics, SB RASNovosibirskRussia
  2. 2.Laboratory of Semiconductor and Dielectric MaterialsNovosibirsk State UniversityNovosibirskRussia
  3. 3.Laboratory of Functional Films and CoatingsNikolaev Institute of Inorganic Chemistry, SB RASNovosibirskRussia
  4. 4.Laboratory of Crystal ChemistryNikolaev Institute of Inorganic Chemistry, SB RASNovosibirskRussia
  5. 5.Laboratory of Research Methods of Composition and Structure of Functional MaterialsNovosibirsk State UniversityNovosibirskRussia
  6. 6.Laboratory for Ellipsometry of Semiconductor Materials and StructuresInstitute of Semiconductor Physics, SB RASNovosibirskRussia
  7. 7.Laboratory for Chemistry of Volatile Coordination and Metallorganic CompoundsNikolaev Institute of Inorganic Chemistry, SB RASNovosibirskRussia

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