The effect of Sn on electrical performance of zinc oxide based thin film transistor
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In this study, we have effectively fabricated undoped and Sn-doped zinc oxide thin film transistors (ZTO TFTs) with the back-gate structure on commercially purchased p-type Si with a thermally grown SiO2 layer (thickness = 100 nm). The ZTO TFTs were prepared via low-cost solution based spin coating method. We investigated the structural and morphological properties of thin films and the effect of Sn doping on the electrical performance of ZnO TFTs. It has been found that the electrical parameters of the ZnO based transistors have highly affected by Sn doping. The field-effect mobility and on/off ratio of doped TFT increased ~ 40 and 106 times by comparison with undoped TFT, respectively. The best results were obtained from 10% Sn doped ZTO TFT with 3.83 cm2 V−1 s−1 the field effect mobility (µsat), 1 V/dec subthreshold slope (SS), 9 V threshold voltage (Vth), 3 × 108 Ion/Ioff ratio and a high on-current of 1.3 mA.
This work was supported by Anadolu University Commission of Scientific Research Project under Grant No. 1706F385.
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