Influence of metals for rear metallization on c-Si solar cells
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With the development of novel n-type crystalline silicon based solar cells, low work function metals compatibility for rear metallization without heat treatment process motivate much attention. In this study, we demonstrate contact characteristics and performances of n-Pasha solar cells with Hf/Ag, Mg/Ag and Ag as rear metallization layers. n-Pasha solar cells with Mg contact layer achieved a series resistance of 0.24 Ω in contrast to Hf of 0.82 Ω and Ag of 1.52 Ω, respectively. It is visible that n-type crystalline silicon solar cell with Mg rear metallization exhibits excellent contact characteristic. In contrast to Ag contact, the open circuit voltage and fill factor of Mg contact were increased by 9% (relative) with a gain of 47 mV and 1.3% (absolute), respectively. The resultant power conversion efficiency of Mg contact obtained a gain of 1.5% (absolute) and 10.5% (relative) compared with Ag contact. Thus, this new technique can be exactly catering for demands of rear metallization for novel n-type silicon based solar cells.
We thank YINLI SOLAR for supporting part manufacturing process of n-Pasha solar cell. This work is supported by the Young Scientists Fund of the National Natural Science Foundation of China (No. 61704045).
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Conflict of interest
There are no conflicts of interest for all authors.
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