Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 23, pp 20253–20259 | Cite as

Structural and electric response of ITO/In2O3 transparent thin film thermocouples derived from RF sputtering at room temperature

  • Junzhan ZhangEmail author
  • Weichao Wang
  • Dan Liu
  • Ying Zhang
  • Peng Shi


Transparent thin film thermocouples have unique characteristics that it can be applied when permit minimal optical interference at in-situ temperature measurement. ITO/In2O3 thin film thermocouples were prepared on fused quartz glasses at room temperature by RF magnetron sputtering. For contrast, ITO thin films post-annealed at different temperatures were investigated accordingly. All films showed good conductivities, smooth surface morphology and high transmission, indicating negligible affection of the post-annealing temperature. The as-deposited ITO film has a Seebeck coefficient of 84.4 µV ºC−1. The thermoelectric voltage of 13.6 mV and significantly lower drift rate of 2.39 °C h−1 were obtained at 190 °C for ITO/In2O3 thin film thermocouples without any heat treatment. This makes the ITO/In2O3 transparent thin film thermocouples great potential as a promising temperature sensor.


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Authors and Affiliations

  1. 1.School of Materials and Mineral ResourcesXi’an University of Architecture and TechnologyXi’anChina
  2. 2.Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’anChina

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