Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications
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We have investigated the electrical and optical properties of erbium (Er3+) doped TiO2 thin films (Er:TiO2 TFs) grown by sol–gel technique on glass and silicon substrates. The samples were characterized by field emission gun–scanning electron microscopes (FEG–SEM), energy dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL) and current–voltage measurement techniques. FEG–SEM and AFM images showed the morphological change in the structure of Er:TiO2 TFs and EDX analysis confirmed the Er3+ doped into TiO2 lattice. Broad PL emissions in visible and infrared regions were observed in undoped TiO2 samples and associated to different mechanisms due to the anatase and rutile phases. PL spectra revealed sharp peaks at 525 nm, 565 nm, 667 nm and 1.54 µm which are related to Er3+ emissions in Er:TiO2 samples. The undoped TiO2 and Er:TiO2 TFs based UV-photodetectors were fabricated, and various device parameters were investigated. The doped devices exhibit high photoresponse upon illuminating 350 nm UV light at 2 V bias with faster response time compared to undoped device.
The authors would gratefully acknowledge SAIF IIT Bombay, India, for providing FEG-SEM and EDX facilities, IIC Roorkee, India for providing AFM facility and Department of Physics, N.I.T. Durgapur, CSIR (03(1355)/16/EMR-II), Government of India for financial support. The Brazilian authors acknowledge the financial support from the Brazilian agencies: Fundação de Amparo a Pesquisa do Estado de São Paulo (FAPESP 2016/10668-7), FAPDF, Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) and Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (Capes).