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Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 22, pp 19353–19358 | Cite as

Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes

  • Sowmya Kolli
  • Mahendra Sunkara
  • Bruce Alphenaar
Article

Abstract

The breakdown characteristics for a GaN wrapround field plate diode are compared to those of a planar diode and a mesa diode to determine the improvement due to the field plate geometry. Mesa diodes exhibit a higher breakdown voltage compared to planar diodes, in agreement with simulation models. Wraparound field plate diodes, however, show high leakage current resulting in lower breakdown values than predicted. It is found that the extra leakage is caused by damage from the plasma enhanced chemical vapor deposition of the SiNx used to form the field plate. To mitigate the leakage current, atomic layer deposition was used to put down a protective Al2O3 prior to SiNx deposition. This significantly reduced the leakage current and raised the breakdown voltage of the wraparound Schottky diodes.

Notes

Acknowledgements

Authors acknowledge the support from endowment for Renewable and Sustainable Energy Research at Conn Center for Renewable Energy Research, University of Louisville.

Supplementary material

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Supplementary material 1 (PNG 186 KB)
10854_2018_64_MOESM2_ESM.png (76 kb)
Supplementary material 2 (PNG 75 KB)

References

  1. 1.
    J.L. Hudgins, G.S. Simin, E. Santi, M.A. Khan, An assessment of wide bandgap semiconductors for power devices. IEEE Trans. Power Electron. 18(3), 907–914 (2003)CrossRefGoogle Scholar
  2. 2.
    I. Akasaki, H. Amano, Present and future of group III nitride semiconductors, in Compound Semiconductors 1995, vol. 145, ed. by J.C. Woo, Y. S. Park (Institute of Physics Conference Series, Bristol, 1996) pp. 19–22Google Scholar
  3. 3.
    R. Dwiliński et al., Recent achievements in AMMONO-bulk method. J. Cryst. Growth 312(18), 2499–2502 (2010)CrossRefGoogle Scholar
  4. 4.
    B. Weiss, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, Analysis and modeling of GaN-based multi field plate Schottky power diodes, in 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), 2016, pp. 1–6Google Scholar
  5. 5.
    J. Ma, D.C. Zanuz, E. Matioli, Field plate design for low leakage current in lateral GaN power Schottky diodes: role of the pinch-off voltage. IEEE Electron Device Lett. 38(9), 1298–1301 (2017)CrossRefGoogle Scholar
  6. 6.
    T. Munir, A.A. Aziz, M.J. Abdullah, M.F. Ain, Improvements in DC current-voltage (I-V) characteristics of n-GaN Schottky diode using metal overlap edge termination. AIP Conf. Proc. 1217(1), 489–494, (2010)CrossRefGoogle Scholar
  7. 7.
    K.-H. Cho, Y.-S. Kim, J. Lim, Y.-H. Choi, M.-K. Han, Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement. Solid-State Electron. 54(4), 405–409 (2010)CrossRefGoogle Scholar
  8. 8.
    K. Remashan, W.-P. Huang, J.-I. Chyi, Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination. Microelectron. Eng. 84(12), 2907–2915 (2007)CrossRefGoogle Scholar
  9. 9.
    J.J. Wierer Jr., J.R. Dickerson, A.A. Allerman, A.M. Armstrong, M.H. Crawford, R.J. Kaplar, Simulations of junction termination extensions in vertical GaN power diodes. IEEE Trans. Electron Devices 64(5), 2291–2297 (2017)CrossRefGoogle Scholar
  10. 10.
    S.N. Mohammad, C.R. Eddy, F. Kub, Ion-implanted edge termination for GaN Schottky diode rectifiers J. Vac. Sci. Technol. B 24(1),178–184 (2006)CrossRefGoogle Scholar
  11. 11.
    T.J. Anderson, J.D. Greenlee, B.N. Feigelson, J.K. Hite, F.J. Kub, K.D. Hobart, Improved vertical GaN Schottky diodes with ion implanted junction termination extension ECS J. Solid State Sci. Technol. 5(6), Q176–Q178 (2016)CrossRefGoogle Scholar
  12. 12.
    S.-C. Lee et al., High breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction, in Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD’05. The 17th International Symposium on, 2005, pp. 247–250: IEEEGoogle Scholar
  13. 13.
    T.J. Anderson, A.D. Koehler, B.N. Feigelson, K.D. Hobart, F.J. Kub, Improved vertical GaN diodes with Mg ion implanted junction termination extension, in Gallium Nitride and Silicon Carbide Power Technologies 6, vol. 75, ed. by M. Dudley, M. Bakowski, N. Ohtani, K. Shenai, B. Raghothamachar (ECS Transactions, no. 12), 2016, pp. 93–97Google Scholar
  14. 14.
    S. Kolli, R. Hickman, B.W. Alphenaar, Wrap around field plate technique for GaN Schottky barrier diodes. MRS Proc. (2014).  https://doi.org/10.1557/opl.2014.943 CrossRefGoogle Scholar
  15. 15.
    V.A. Dmitriev, K.G. Irvine, C.H. Carter Jr., N.I. Kuznetsov, E.V. Kalinina, Electric breakdown in GaN p-n junctions. Appl. Phys. Lett. 68(2), 229–231 (1996)CrossRefGoogle Scholar
  16. 16.
    W.J. Fan, M.F. Li, T.C. Chong, J.B. Xia, Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1–xAlxN. J. Appl. Phys. 79(1), 188–194 (1996)CrossRefGoogle Scholar
  17. 17.
    M. Leszczynski et al, Lattice parameters of gallium nitride. Appl. Phys. Lett. 69(1), 73–75 (1996)CrossRefGoogle Scholar
  18. 18.
    F. Karouta, K. Vora, J. Tian, C. Jagadish, Structural, compositional and optical properties of PECVD silicon nitride layers. J. Phys. D 45(44), 445301 (2012)CrossRefGoogle Scholar
  19. 19.
    C.H. Ng, K.W. Chew, S.F. Chu, Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors. IEEE Electron Device Lett. 24(8), 506–508 (2003)CrossRefGoogle Scholar
  20. 20.
    B. Luo, J.W. Johnson, F. Ren, K.W. Baik, S.J. Pearton, Effect of plasma enhanced chemical vapor deposition of SiNx on n-GaN Schottky rectifiers. Solid-State Electron. 46(5), 705–710, (2002)CrossRefGoogle Scholar
  21. 21.
    Z.H. Liu, G.I. Ng, H. Zhou, S. Arulkumaran, Y.K.T. Maung, Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation. Appl. Phys. Lett. 98(11), 113506 (2011)CrossRefGoogle Scholar
  22. 22.
    J. Joh, J.A. Del Alamo, A current-transient methodology for trap analysis for GaN high electron mobility transistors. IEEE Trans. Electron Devices 58(1), 132–140 (2011)CrossRefGoogle Scholar
  23. 23.
    F. Roccaforte et al, Recent advances on dielectrics technology for SiC and GaN power devices. Appl. Surf. Sci. 301, 9–18 (2014)CrossRefGoogle Scholar
  24. 24.
    M. Kanamura et al, High power and high gain AlGaN/GaN MIS-HEMTs with high-k dielectric layer. Phys. Status Solidi c 5(6), 2037–2040 (2008)CrossRefGoogle Scholar
  25. 25.
    J. Derluyn et al., Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer. J. Appl. Phys. 98(5), 054501 (2005)CrossRefGoogle Scholar
  26. 26.
    H. Kambayashi et al., High quality SiO2/Al2O3 gate stack for GaN metal-oxide-semiconductor field-effect transistor. Jpn. J. Appl. Phys. 52(4), 04cf09 (2013)CrossRefGoogle Scholar
  27. 27.
    Z. Shen et al., Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors. Phys. Status Solidi A 213(10), 2693–2698 (2016)CrossRefGoogle Scholar
  28. 28.
    D. Kikuta, T. Narita, K. Kutsuki, T. Uesugi, T. Kachi, Reliability evaluation of Al2O3 deposited by ozone-based atomic layer deposition on dry-etched n-type GaN. Jpn. J. Appl. Phys. 52(8), 08jn19 (2013)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Sowmya Kolli
    • 1
  • Mahendra Sunkara
    • 2
  • Bruce Alphenaar
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of LouisvilleLouisvilleUSA
  2. 2.Department of Chemical EngineeringUniversity of LouisvilleLouisvilleUSA

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