Revisiting the effects of carbon-doping at 1017 cm−3 level on dislocation behavior of Czochralski silicon: from room temperature to elevated temperatures
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Carbon is an inevitable impurity subsidiary to oxygen in Czochralski silicon (CZ-Si). Its effects on the properties of CZ-Si have been investigated for decades. However, the research work addressing the dislocation behavior and therefore the mechanical strength of CZ-Si is considerably limited. The previous reports almost focused on the carbon effects on the dislocation behavior of CZ-Si at temperatures not lower than 800 °C. While, how the carbon-doping affects the dislocation behavior of CZ-Si at room temperature or the temperatures below 800 °C has been hardly revealed. In this work, we have comprehensively revisited the effects of carbon-doping at 1017 cm−3 level on the dislocation behavior of CZ-Si from room temperature to elevated temperatures up to 1000 °C. For the first time, we have found that the carbon-doping exerts the exact opposite effects on the dislocation behavior of CZ-Si across a certain temperature (∼ 750 °C). The carbon-doping facilitates the generation of dislocations under the nanoindentation at room temperature and promotes the gliding of microindentation-induced dislocations at temperatures below 750 °C. This is supposed to arise from that the carbon-doping reduces the lattice Peierls energy to a certain extent to resist the dislocation motion. On the contrary, at temperatures from 750 to 1000 °C, the carbon-doping suppresses the gliding of microindentation-induced dislocations, which is due to that the carbon-related complexes or/and oxygen precipitates exhibit the role of dislocation-locking. We believe that the present work gives an insight into the carbon effects on the mechanical strength of CZ-Si.
The author would like to thank the financial supports from Natural Science Foundation of China (Grant Nos. 61674126, 51532007). Xuegong Yu also acknowledges the financial support from the Science Challenge Project (No. TZ2016003-1).
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