Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 22, pp 19278–19286 | Cite as

Enhanced photoelectrochemical performance by doping Mo into BiVO4 lattice

  • Linmeng Wang
  • Xiuquan GuEmail author
  • Yulong Zhao
  • Meng Wei
  • Yinghuai Qiang
  • Yun ZhaoEmail author


The Mo-doped BiVO4 (m-BiVO4) thin films were deposited onto transparent conducting substrates via a facile metallic organic deposition method. The effect of nominal Mo doping contents on the photoelectrochemical (PEC) performance was investigated. By terms of the electrochemical impedance spectra and Mott–Schottky results, the best PEC performance appeared in the 5 and 10 at% Mo-doped BiVO4 samples was attributed to a lowering of charge transfer resistance occurred at the electrode/electrolyte interface. Moreover, a self-powered Mo:BiVO4 PEC biosensor was fabricated for detecting the glutathione (GSH), which demonstrated a rapid response, a wide detection range 5–1000 µmol/L (µM), a ultralow detect limit of 59 nM, and a sensitivity of 835 A/cm2/mM−1.



This work is financially supported by the Fundamental Research Funds for the Central Universities (2015XKMS037).

Supplementary material

10854_2018_54_MOESM1_ESM.doc (2.2 mb)
Supplementary material 1 (DOC 2243 KB)


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Authors and Affiliations

  1. 1.School of Materials Science and EngineeringChina University of Mining and TechnologyXuzhouChina
  2. 2.School of Chemical Engineering and TechnologyChina University of Mining and TechnologyXuzhouChina

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