Skip to main content
SpringerLink
Log in

Polycrystalline silicon films fabricated by rapid thermal annealing

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Poly-crystalline silicon (poly-Si) films were fabricated by rapid thermal annealing (RTA) of amorphous silicon films which were deposited on quartz by hot wire chemical vapor deposition. An insertion of Cr layer can significantly suppress the peeling of Si films during the RTA process. The effect of RTA parameters on the structural properties of poly-Si films was investigated by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The results show that the crystallinity of the poly-Si films is increased with the increase of RTA temperature and duration. A sharp peak at about 520 cm−1 is observed in the Raman spectra of poly-Si films annealed at 900 and 1,100 °C for 15 s indicating the excellent crystallinity of the poly-Si films fabricated by RTA. Poly-Si films with high crystalline fraction of 97.3 % were obtained by RTA at 1,100 °C for 20 s.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8

Similar content being viewed by others

References

  1. Q. Wang, M. R. Page, E. Iwaniczko, Y. Q. Xu, L. Roybal, R. Bauer, B. To, H. C. Yuan, A. Duda, Y. F. Yan, in Proceedings of 33rd PVSEC-IEEE, San Diego, USA (2008)

  2. M. Modreanu, M. Bercu, C. Cobianu, Thin Solid Films 383, 212 (2001)

    Article  CAS  Google Scholar 

  3. R.C. Teixeira, I. Doi, M.B.P. Zakia, J.A. Diniz, J.W. Swart, Mater. Sci. Eng. B 112, 160 (2004)

    Article  Google Scholar 

  4. A.M. Nardes, A.M. De Andrade, F.J. Fonseca, E.A.T. Dirani, J. Mater. Sci. Mater. Electron. 14, 407 (2003)

    Article  CAS  Google Scholar 

  5. J.H. Shim, S. Im, N.H. Cho, Appl. Surf. Sci. 234, 268 (2004)

    Article  CAS  Google Scholar 

  6. S.Y. Lien, H.Y. Mao, B.R. Wu, R.H. Horng, D.S. Wuu, Chem. Vapor Depos. 13, 247 (2007)

    Article  CAS  Google Scholar 

  7. H.Y. Mao, D.S. Wuu, B.R. Wu, S.Y. Lo, R.H. Horng, Mater. Chem. Phys. 126, 665 (2011)

    Article  CAS  Google Scholar 

  8. M. Kimura, Solid-State Electron. 54, 1500 (2010)

    Article  CAS  Google Scholar 

  9. S.P. Ahrenkiel, A.H. Mahan, D.S. Ginley, Y. Xu, Mater. Sci. Eng. B 176, 972 (2011)

    Article  CAS  Google Scholar 

  10. S. Peng, D. Hu, D. He, Appl. Surf. Sci. 258, 6003 (2012)

    Article  CAS  Google Scholar 

  11. W.C. Lin, S.C. Lee, Y.S. Lee, J. Mater. Sci. Mater. Electron. 21, 270 (2010)

    Article  CAS  Google Scholar 

  12. L. Fornarini, J.C. Conde, S. Chiussi, P. Gonzalez, B. Leon, S. Martelli, Appl. Surf. Sci. 253, 7957 (2007)

    Article  CAS  Google Scholar 

  13. C.C. Kuo, Opt. Lasers Eng. 49, 804 (2011)

    Article  Google Scholar 

  14. K. Ohdaira, S. Ishii, N. Tomura, H. Matsumura, Jpn. J. Appl. Phys. 50, 04DP01 (2011)

    Article  Google Scholar 

  15. K. Ohdaira, T. Fujiware, Y. Endo, K. Shiba, H. Takemoto, H. Matsumura, Jpn. J. Appl. Phys. 49, 04DP04 (2010)

    Article  Google Scholar 

  16. K. Ohdaira, T. Fujiware, Y. Endo, S. Nishizaki, H. Takemoto, J. Appl. Phys. 106, 044907 (2009)

    Article  Google Scholar 

  17. K.Y. Cheong, W. Bahng, N.K. Kim, Microelectron. Eng. 83, 65 (2006)

    Article  CAS  Google Scholar 

  18. V. Janardhanam, A.A. Kumar, V.R. Reddy, P.N. Reddy, J. Mater. Sci. Mater. Electron. 21, 285 (2010)

    Article  CAS  Google Scholar 

  19. D. E. Gray, American Institute of Physics Hand Book, 3rd edn. (Maple Press Company, 1972), pp. 4–124

  20. C. Becker, F. Ruske, T. Sontheimer et al., J. Appl. Phys. 106, 0845061 (2009)

    Google Scholar 

  21. H. Cai, H. Shen, L. Zhang, H. Huang, L. Lu, Z. Tang, J. Shen, Phys. B Condens. Matter. 405, 3852 (2010)

    Article  CAS  Google Scholar 

Download references

Acknowledgments

This work is supported by the National Natural Science Foundation of China (61176062), the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions and the funding of Jiangsu Innovation Program for Graduate Education (CXZZ11_0206).

Author information

Authors and Affiliations

  1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing, 210016, China

    Lei Zhang, Honglie Shen, Jiayi You, Feng Jiang & Tianru Wu

  2. Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing, 210016, China

    Honglie Shen

  3. Department of Materials Engineering, Jingling Institute of Technology, Nanjing, 211169, China

    Zhengxia Tang

Authors
  1. Lei Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Honglie Shen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jiayi You
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Feng Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Tianru Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Zhengxia Tang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Honglie Shen.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhang, L., Shen, H., You, J. et al. Polycrystalline silicon films fabricated by rapid thermal annealing. J Mater Sci: Mater Electron 23, 1279–1283 (2012). https://doi.org/10.1007/s10854-012-0786-6

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-012-0786-6

Keywords

Search

Navigation