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Journal of Materials Science

, Volume 54, Issue 17, pp 11526–11537 | Cite as

Effect of Ti doping on the crystallography, phase, surface/interface structure and optical band gap of Ga2O3 thin films

  • Sandeep Manandhar
  • Anil K. Battu
  • Susheng Tan
  • Rahul Panat
  • V. Shutthanandan
  • C. V. RamanaEmail author
Electronic materials
  • 125 Downloads

Abstract

The effect of titanium (Ti) doping on the crystal structure, phase, surface/interface chemistry, microstructure and optical band gap of gallium oxide (Ga2O3) (GTO) films is reported. The Ti content was varied from 0 to ~ 5 at% in co-sputtering, using Ga2O3 ceramic and Ti metal targets, deposited GTO films produced. The sputtering power to the Ti target was varied in the range of 0–100 W, while keeping the sputtering power to Ga2O3 constant at 100 W, to produce GTO films with 0–5 at% Ti. The Ti-incorporation-induced effects were significant for the crystal structure, phase, surface/interface chemistry and morphology, which in turn induce changes in the band gap. The high-resolution core-level X-ray photoelectron spectroscopy (XPS) analyses confirm that the Ga ions exist as Ga3+ in both intrinsic Ga oxide and GTO films. However, XPS data reveal the formation of Ga2O3–TiO2 films with the presence of Ti4+ ions with increasing Ti sputtering power, i.e., higher Ti contents in GTO. Evidence for the formation of nanocrystalline Ga2O3–TiO2 films was also found in the structural analyses performed using electron microscopy and grazing incidence X-ray diffraction. Significant band gap reduction (Eg ~ 0.9 eV) occurs in GTO films with increasing Ti dopant concentration from 0 to 5 at%. A correlation between the Ti dopant concentration, surface/interface chemistry, microstructure and band gap of GTO films is established.

Notes

Acknowledgements

The authors acknowledge, with pleasure, the support from the National Science Foundation (NSF) with Grant No. ECCS-1509653. CVR also acknowledges the NSF-PREM Grant #DMR-1827745.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Center for Advanced Materials Research (CMR)University of Texas at El PasoEl PasoUSA
  2. 2.Department of Electrical and Computer Engineering, and Petersen Institute of NanoScience and EngineeringUniversity of PittsburghPittsburghUSA
  3. 3.Department of Mechanical EngineeringCarnegie Mellon UniversityPittsburghUSA
  4. 4.Environmental Molecular Sciences Laboratory (EMSL)Pacific Northwest National Laboratory (PNNL)RichlandUSA

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