Plasma-induced synthesis of boron and nitrogen co-doped reduced graphene oxide for super-capacitors
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Boron and nitrogen co-doped reduced graphene oxide (BN-rGO) materials were prepared via a facile dielectric barrier discharge plasma treatment method. X-ray photoelectron spectroscopy results demonstrated that the boron content in the boron-doped rGO (B-rGO) and BN-rGO is 1.21 at.% and 1.41 at.%, while the nitrogen content in the nitrogen-doped rGO (N-rGO) and BN-rGO is 2.12 at.% and 2.69 at.%, respectively. The doping of heteroatoms significantly improves the capacitance of the as-synthesized materials, giving BN-rGO a highly enhanced capacitance of 350 F g−1 at a current density of 0.5 A g−1, which is 2.36, 1.46 and 1.21 times higher than that of rGO, B-rGO or N-rGO, respectively.
This work was financially supported by the National Natural Science Foundation of China (21606026, 21776025) and partially supported by the Fundamental Research Funds for the Central Universities (106112017CDJXY220005, 106112017CDJXF220009, 106112017CDJPT220001, 106112017CDJQJ228809, 106112017CDJXFLX0014).
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