Journal of Materials Science

, Volume 54, Issue 13, pp 9632–9642 | Cite as

Plasma-induced synthesis of boron and nitrogen co-doped reduced graphene oxide for super-capacitors

  • Tao Zhu
  • Shaobo Li
  • Bin Ren
  • Limei Zhang
  • Lichun DongEmail author
  • Luxi TanEmail author
Energy materials


Boron and nitrogen co-doped reduced graphene oxide (BN-rGO) materials were prepared via a facile dielectric barrier discharge plasma treatment method. X-ray photoelectron spectroscopy results demonstrated that the boron content in the boron-doped rGO (B-rGO) and BN-rGO is 1.21 at.% and 1.41 at.%, while the nitrogen content in the nitrogen-doped rGO (N-rGO) and BN-rGO is 2.12 at.% and 2.69 at.%, respectively. The doping of heteroatoms significantly improves the capacitance of the as-synthesized materials, giving BN-rGO a highly enhanced capacitance of 350 F g−1 at a current density of 0.5 A g−1, which is 2.36, 1.46 and 1.21 times higher than that of rGO, B-rGO or N-rGO, respectively.



This work was financially supported by the National Natural Science Foundation of China (21606026, 21776025) and partially supported by the Fundamental Research Funds for the Central Universities (106112017CDJXY220005, 106112017CDJXF220009, 106112017CDJPT220001, 106112017CDJQJ228809, 106112017CDJXFLX0014).

Supplementary material

10853_2019_3552_MOESM1_ESM.docx (40.1 mb)
Supplementary material 1 (DOCX 41104 kb)


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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Green Intelligence Environmental SchoolYangtze Normal UniversityFuling, ChongqingPeople’s Republic of China
  2. 2.School of Chemistry and Chemical EngineeringChongqing UniversityChongqingPeople’s Republic of China
  3. 3.Institute of Energy ResourcesHebei Academy of ScienceShijiazhuangPeople’s Republic of China
  4. 4.Key Laboratory of Low-Grade Energy Utilization Technologies and Systems of the Ministry of EducationChongqing UniversityChongqingPeople’s Republic of China

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