Journal of Materials Science

, Volume 54, Issue 9, pp 6807–6814 | Cite as

Controllable growth of vertical ReS2 nanosheets and nanorods by vapor transport method

  • Yang Liu
  • Qinwei An
  • Xianquan MengEmail author


As an emerging two-dimensional transition metal dichalcogenide, rhenium disulfide (ReS2) has been attracting more and more attention for its unique properties and great potential in the design of the electronic and optoelectronic devices. Here, for the first time, large-size ReS2 nanosheets with area of over 35 μm × 20 μm were successfully synthesized via vapor transport (VT) method. Moreover, the growth of ReS2 nanosheets via VT method was demonstrated to be effective on Si, SiO2, and Au substrate, which would further expand the application of ReS2 during the design of devices on different substrates. Besides, the effect of Ar gas flow on the growth of ReS2 nanosheets was systematically investigated. Furthermore, it is the first time the 1D ReS2 nanorods have been synthesized using the VT method. Based on the experiment results, the growth mechanism of ReS2 nanosheets and nanorods was proposed. It is believed that the research may pave a way for the growth of large-size ReS2 nanosheets and the wider application of ReS2 nanostructures.



This work was financially supported by the National Natural Science Foundation of China under Grant (No. U1631110).

Compliance with ethical standards

Conflict of interest

This contribution has been approved by all coauthors, it has not been published before, it is not under consideration for publication anywhere else, and there is no conflict of interest.

Supplementary material

10853_2019_3395_MOESM1_ESM.docx (1 mb)
Supplementary material 1 (DOCX 1063 kb)


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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Center for Nanoscience and Nanotechnology, School of Physics and TechnologyWuhan UniversityWuhanPeople’s Republic of China
  2. 2.Hubei Nuclear Solid Physics Key LaboratoryWuhanPeople’s Republic of China

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