Deformation patterns and fracture stress of beta-phase gallium oxide single crystal obtained using compression of micro-pillars
- 382 Downloads
The deformation of single-crystal beta-phase gallium oxide (or β-Ga2O3) micro-pillars under compression was investigated with the aid of transmission electron microscopy. High-density stacking faults were the dominant deformation defects in the plastically deformed micro-pillars. Micro-cracks were found along (200), (001) and (010) lattice planes and fracture occurred along (200) lattice plane when compressive strain was sufficiently great. Lattice bending was also observed in the fractured pillar. The average fracture stress and strain of β-Ga2O3 being measured are 7.25 ± 1.11 GPa and 3.80 ± 0.57%, respectively, which have never been reported previously.
This work was financially supported by the Australia Research Council (ARC) under Discovery Project Scheme (DP180103275). SG was funded by the Youth Program of National Natural Science Foundation of China (51505063).
- 3.Stepanov SI, Nikolaev VI, Bougrov VE, Romanov AE (2016) Gallium oxide: properties and applications—a review. Rev Adv Mater Sci 44:63–86Google Scholar
- 8.Gallium oxide trumps traditional wide bandgap semiconductors. www.compoundsemiconductornet. Accessed 2 Oct 2018
- 28.Persson K (2014) Materials data on Ga2O3 (SG:12) by Materials Project mp-886Google Scholar