Journal of Materials Science

, Volume 46, Issue 16, pp 5553–5558 | Cite as

Investigations on the structural, optical and electrical properties of Nb-doped SnO2 thin films

  • V. Gokulakrishnan
  • S. Parthiban
  • K. Jeganathan
  • K. RamamurthiEmail author


Niobium-doped tin oxide thin films were deposited on glass substrates by the chemical spray pyrolysis method at a substrate temperature of 400 °C. Effects of Nb doping on the structural, electrical and optical properties have been investigated as a function of niobium concentration (0–2 at.%) in the spray solution. X-ray diffraction patterns showed that the films are polycrystalline in nature and the preferred growth direction of the undoped film shifts to (200) for Nb-doped films. Atomic force microscopy study shows that the surface morphology of these films vary when doping concentration varies. The negative sign of Hall coefficient confirmed the n-type conductivity. Resistivity of ~4.3 × 10−3 Ω cm, carrier concentration of ~5 × 1019 cm−3, mobility of ~25 cmV−1 s−1 and an average optical transmittance of ~70% in the visible region (500–800 nm) were obtained for the film doped with 0.5 at.% niobium.


SnO2 SnO2 Film SnO2 Thin Film Prefer Growth Direction Spray Pyrolysis Method 



The authors would like to thank the Inter University Accelerator Center, New Delhi, India for providing the financial support through UFUP project Scheme (Ref: UFUP-41313).


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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • V. Gokulakrishnan
    • 1
  • S. Parthiban
    • 1
  • K. Jeganathan
    • 2
  • K. Ramamurthi
    • 1
    Email author
  1. 1.Crystal Growth and Thin Films Laboratory, School of PhysicsBharathidasan UniversityTiruchirappalliIndia
  2. 2.Centre for Nanoscience and Nanotechnology, School of PhysicsBharathidasan UniversityTiruchirappalliIndia

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