Journal of Materials Science

, Volume 44, Issue 16, pp 4354–4359 | Cite as

Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

  • Seung Yun Lee
  • Hyung Keun Kim
  • Jin Hyock Kim
  • Jae Sung Roh
  • Doo Jin ChoiEmail author


We have investigated the nitrogen doping effect on phase transition characteristics and electrical property of nitrogen-doped GeSb (N-doped GS) thin films. The nitrogen gas flow rate changed from 0 sccm (GS(0)) to 6 sccm (GS(6)) during the deposition. The sheet resistance of crystalline state was increased from 2.6 to 5.1 kΩ/□ and thermal stability of amorphous was increased as nitrogen gas flow rate increased due to nitrogen doping effect. Moreover, the average grain size was decreased from 9.7 to 6.6 nm at 400 °C as nitrogen gas flow rate increased. However, the crystallization threshold time and laser power of GS(6) were shorter and lower than GS(0) caused by lower optical reflectivity. Nitrogen-doped GeSb showed the possibility of low RESET power and high speed PRAM operation.


Sheet Resistance Phase Change Material Sb2Te3 Optical Contrast Phase Change Material 



This work was supported by the Second Stage of Brain, Korea 21 project in 2007 and Hynix Semiconductor Inc. of Korea.


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Seung Yun Lee
    • 1
  • Hyung Keun Kim
    • 1
  • Jin Hyock Kim
    • 2
  • Jae Sung Roh
    • 2
  • Doo Jin Choi
    • 1
    Email author
  1. 1.Department of Ceramic EngineeringYonsei UniversitySeoulKorea
  2. 2.Memory R&D DivisionHynix Semiconductor Inc.Kyoungki-doKorea

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