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Journal of Materials Science

, Volume 44, Issue 19, pp 5167–5181 | Cite as

Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures

  • H. Han
  • K. Lee
  • W. Lee
  • M. Alexe
  • D. Hesse
  • S. BaikEmail author
Ferroelectrics

Abstract

Nanostructured ferroelectrics are important objects for studies on ferroelectric size effects as well as for applications to memory devices with ultra-high memory density. In the present article, we introduce several approaches for the synthesis of confined ferroelectrics with sizes in and below the hundreds of nanometer range, including top-down processes like e-beam lithography, self-assembly methods like chemical solution deposition, and growth by pulsed laser deposition using stencil masks. Furthermore, the ferroelectric domain structure of part of these nanostructures is investigated by means of synchrotron X-ray diffraction, and its contribution to the ferroelectric properties is discussed.

Keywords

Piezoelectric Property Misfit Strain Ferroelectric Thin Film Chemical Solution Deposition Piezoresponse Force Microscopy 

Notes

Acknowledgements

The authors thank Y. J. Park, J.-Y. Choi (Pohang Light Source, Pohang, Korea), S. Lee, Y. H. Jeong (Pohang University of Science and Technology, Pohang, Korea), R. Hillebrand, R. Ji, S. K. Lee, A. Lotnyk, M. A. Schubert, S. Senz, and U. Gösele (Max Planck Institute of Microstructure Physics, Halle, Germany), as well as K. Nielsch (Institute of Applied Physics, Hamburg, Germany) for many fruitful discussions and for experimental and analytical contributions. H. Han is grateful for the award of a fellowship of the German Academic Exchange Service (DAAD) and for support by DFG (446 KOR 113/215/0-1) and KRF. Financial support from the Volkswagen Foundation (Project I/80897), the German Ministry of Education and Research (BMBF, FKZ 03N8701) and from the Brain Korea 21 Project are also acknowledged. The experiments at PLS were supported by the MEST (Ministry of Education, Science, and Technology) and POSTECH.

Open Access

This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

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Copyright information

© The Author(s) 2009

Open AccessThis is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://doi.org/creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

Authors and Affiliations

  • H. Han
    • 1
  • K. Lee
    • 1
  • W. Lee
    • 2
  • M. Alexe
    • 3
  • D. Hesse
    • 3
  • S. Baik
    • 1
    Email author
  1. 1.Department of Materials Science and EngineeringPohang University of Science and TechnologyPohangKorea
  2. 2.Korea Research Institute of Standards and ScienceDaejonKorea
  3. 3.Max Planck Institute of Microstructure PhysicsHalleGermany

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