Journal of Materials Science

, Volume 44, Issue 13, pp 3556–3560 | Cite as

Thickness effects of Bi3.5Nd0.5Ti3O12 buffer layers on structure and electrical properties of BiFeO3 films

  • Xuemei Chen
  • Guangda HuEmail author
  • Xi Wang
  • Jing Yan
  • Changhong Yang
  • Weibing Wu


BiFeO3 (BFO) thin films deposited on various thicknesses (0, 40, 80, and 160 nm) of Bi3.5Nd0.5Ti3O12 (BNT) buffer layers were fabricated on indium tin oxide (ITO)/Si substrates using a metal organic decomposition process. X-ray diffraction (XRD) measurements reveal that the BNT buffer layers can favor the growth of (110)-oriented grains in the BFO films. Well-saturated PE hysteresis loops can be obtained in BFO films with BNT buffer layers due to their lower leakage current densities compared with that in BFO film deposited directly on ITO/Si substrate. A remanent polarization (Pr) as large as 70.2 ± 2 μC/cm2 can be achieved in BFO film with 40-nm-thick BNT buffer layer. Further increase of the buffer layer thickness results in the degradation of the rectangularity of PE hysteresis loops, reduction of the Pr value, as well as deterioration of the charge-retaining ability for the double-layered films.


Buffer Layer BiFeO3 Leakage Current Density Remnant Polarization Chemical Solution Deposition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was supported by funding from the National Natural Science Foundation of China (90207025 and 50502016) and the National Science Foundation of Shandong Province (Z2004G06).


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Xuemei Chen
    • 1
  • Guangda Hu
    • 1
    Email author
  • Xi Wang
    • 1
  • Jing Yan
    • 1
  • Changhong Yang
    • 1
  • Weibing Wu
    • 1
  1. 1.School of Materials Science and EngineeringUniversity of JinanJinanChina

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