Thickness-induced crystallization of amorphous In2O3 films: influence of the film deposition rate
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Several authors have studied the crystallization of amorphous In2O3 films in order to investigate the application of the films as transparent conductors and to elucidate the kinetics of the crystal growth of the films in general [1, 2, 3, 4]. At substrate temperatures of 150–250 °C, the films initially grow in an amorphous form and later crystallize as the film thickness increases . This thickness-induced crystallization of the amorphous films is of interest from the viewpoint of the nucleation and growth of thin films, but little has been reported on the details of the film structure. In this study we applied transmission electron microscopy to investigate the effect of the film thickness on the crystallization of In2O3 deposits . The results are summarized as follows. When films are deposited at a temperature of 200 °C and rate of 0.10 nm/s, those of a very thin thickness of about 1.0 nm are interspersed with amorphous grains, and the amorphous islands gradually expand as the...
KeywordsFilm Thickness Deposition Rate In2O3 Amorphous Region Dark Field Image
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