The effect of repeated annealing temperature on the structural, optical, and electrical properties of TiO2 thin films prepared by dip-coating sol–gel method
- 241 Downloads
In this study, we have studied the effect of repeated annealing temperatures on TiO2 thin films prepared by dip-coating sol–gel method onto the glasses and silicon substrates. The TiO2 thin films coated samples were repeatedly annealed in the air at temperatures 100, 200, and 300 °C for 5 min period. The dipping processes were repeated 5 to 10 times in order to increase the thickness of the films and then the TiO2 thin films were annealed at a fixed temperature of 500 °C for 1 h period. The effect of repeated annealing temperature on the TiO2 thin films prepared on glass substrate were investigated by means of UV–VIS spectroscopy, X-ray diffraction (XRD), and atomic force microscopy (AFM). It was observed that the thickness, average crystallite size, and average grain size of TiO2 samples decreased with increasing pre-heating temperature. On the other hand, thickness, average crystallite size, and average grain size of TiO2 films were increased with increasing number of the layer. Al/TiO2/p-Si metal–insulator–semiconductor (MIS) structures were obtained from the films prepared on p-type single silicon wafer substrate. Capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements of the prepared MIS structures were conducted at room temperature. Series resistance (Rs) and oxide capacitance (Cox) of each structures were determined by means of the C–V curves.
KeywordsTiO2 Atomic Force Microcopy TiO2 Film Average Crystallite Size TiO2 Thin Film
This work is supported by Ankara University (BIYEP) Project number 2005-K-120-140-8 and Ankara University Scientific Research Project (BAP), 2007-07-45-054.
- 11.Kern W (1993) Handbook of semiconductor cleaning technology Noyes, New YorkGoogle Scholar
- 13.Cullity BD (1978) Elements of X-ray diffraction, 2nd edn. Addison-Wesley, California, USAGoogle Scholar
- 21.Nicollian EH, Brews HR (1982) Metal-oxide semiconductor (MOS) physics and technology. Wiley, New YorkGoogle Scholar