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Journal of Materials Science

, Volume 44, Issue 1, pp 280–284 | Cite as

Scaling down of organic thin film transistors: short channel effects and channel length-dependent field effect mobility

  • Yi ChenEmail author
  • Ishiang Shih
Article

Abstract

Organic thin film transistors with P3HT (poly-3-hexylthiophene) as active semiconducting layer, channel lengths from 0.3 to 20 μm, and gate oxide thicknesses from 15 to 170 nm have been successfully fabricated on Si substrates. The measurement results show that the channel length over oxide thickness ratio should be large enough (i.e., the vertical electric field should be at least 10 times higher than the lateral electric filed) in order to suppress the short channel effects of transistors. The field effect mobility of long channel devices (L ≥ 5 μm) is about an order of magnitude larger than small channel devices (L from 0.3 to 2.5 μm), which could be attributed to the more severe contact resistance effects between organic materials and metal contacts for devices with smaller dimensions.

Keywords

Contact Resistance Gate Voltage Channel Length Oxide Thickness Pentacene 

References

  1. 1.
    Xu Y, Berger PR (2004) J Appl Phys 95:1497CrossRefGoogle Scholar
  2. 2.
    Wang JZ, Zheng ZH, Sirringhaus H (2006) Appl Phys Lett 89:083513CrossRefGoogle Scholar
  3. 3.
    Tukagoshi K, Fujimori F, Minari T, Miyadera T, Hamano T, Aoyagi Y (2007) Appl Phys Lett 91:113508CrossRefGoogle Scholar
  4. 4.
    Chen Y, Zhu WW, Xiao S, Shih I (2004) J Vac Sci Technol 22:768CrossRefGoogle Scholar
  5. 5.
    Haddock JN, Zhang X, Zheng S, Marder SR, Kippelen B (2005) Proce SPIE 11:5940Google Scholar
  6. 6.
    Chabinyc ML, Lu J-P, Street RA, Wu Y, Liu P, Ong BS (2004) J Appl Phys 96:2063CrossRefGoogle Scholar
  7. 7.
    Xu Y, Berger PR (2004) J Appl Phys 95:1497CrossRefGoogle Scholar
  8. 8.
    Wang L, Fine D, Basu D, Dodabalapur A (2007) J Appl Phys 101:054515CrossRefGoogle Scholar
  9. 9.
    Leufgen M, Bass U, Muck T, Borzenko T, Schmidt G, Geurts J, Wagner V, Molenkamp LW (2004) Synth Met 146:341CrossRefGoogle Scholar
  10. 10.
    Klauk H, Schmid G, Zhou L, Sheraw CD, Huang J, Nichols JA, Jackson TN (2001) In: Inter Semi Cond Dev Reas Symp Proc, p 349Google Scholar
  11. 11.
    Maeda T, Kato H, Kawakami H (2006) Appl Phys Lett 89:123508CrossRefGoogle Scholar
  12. 12.
    Gundlach DJ, Zhou L, Nichols JA, Jackson TN, Necliudov PV, Shur MS (2006) J Appl Phys 100:024509CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  1. 1.Department of Electrical & Computer EngineeringMcGill UniversityMontrealCanada

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