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Journal of Materials Science

, Volume 43, Issue 12, pp 4344–4347 | Cite as

Zero-phonon lines of nitrogen-cluster states in GaNxAs1−x: H identified by time-resolved photoluminescence

  • K. Hantke
  • S. Horst
  • S. Chatterjee
  • P. J. Klar
  • K. Volz
  • W. Stolz
  • W. W. Rühle
  • F. Masia
  • G. Pettinari
  • A. Polimeni
  • M. Capizzi
Letter

The incorporation of only a few percentage of nitrogen atoms into a III–V host material, e.g., GaAs or GaP, leads to dramatic changes in the electronic and optical properties of these compounds [1]. These materials show a very strong band gap bowing with increasing nitrogen concentration [2, 3]. Post-growth annealing of these dilute nitrides induces a noticeable blue-shift of the band-gap [1], while post-growth hydrogenation effectively passivates the incorporated nitrogen atoms due to the formation of various N–H complexes [4, 5].

Both post-growth effects have been studied intensively [1]. Numerous experimental results have shown that the nitrogen-induced disorder leads to the formation of various localized states related to isolated N atoms, NN-pair states, and nitrogen-clusters (NC) even in the very dilute regime (nitrogen concentrations lower than 0.3%) [6, 7]. The modification of the electronic properties, e.g., the electron effective mass and the gyromagnetic factor of electrons...

Keywords

Optical Excitation Carrier Relaxation Optical Matrix Element TRPL Measurement Incorporated Nitrogen Atom 

Notes

Acknowledgements

The Marburg Group acknowledges funding by the Deutsche Forschungsgemeinschaft (DFG) through the research group 483 “Metastable Compound Semiconductor Systems and Heterostructures.”

Open Access

This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

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Copyright information

© The Author(s) 2008

Open AccessThis is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://doi.org/creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

Authors and Affiliations

  • K. Hantke
    • 1
    • 2
  • S. Horst
    • 1
  • S. Chatterjee
    • 1
  • P. J. Klar
    • 1
    • 3
  • K. Volz
    • 1
  • W. Stolz
    • 1
  • W. W. Rühle
    • 1
  • F. Masia
    • 4
  • G. Pettinari
    • 4
  • A. Polimeni
    • 4
  • M. Capizzi
    • 4
  1. 1.Faculty of Physics and Material Sciences CenterPhilipps-Universität MarburgMarburgGermany
  2. 2.Max-Planck-Institute for Dynamics and Self-OrganizationGottingenGermany
  3. 3.Institute of Experimental Physics IJustus-Liebig-UniversitätGiessenGermany
  4. 4.CNISM and Dipartimento di FisicaSapienza Universitá di RomaRomeItaly

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