Zero-phonon lines of nitrogen-cluster states in GaNxAs1−x: H identified by time-resolved photoluminescence
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The incorporation of only a few percentage of nitrogen atoms into a III–V host material, e.g., GaAs or GaP, leads to dramatic changes in the electronic and optical properties of these compounds . These materials show a very strong band gap bowing with increasing nitrogen concentration [2, 3]. Post-growth annealing of these dilute nitrides induces a noticeable blue-shift of the band-gap , while post-growth hydrogenation effectively passivates the incorporated nitrogen atoms due to the formation of various N–H complexes [4, 5].
Both post-growth effects have been studied intensively . Numerous experimental results have shown that the nitrogen-induced disorder leads to the formation of various localized states related to isolated N atoms, NN-pair states, and nitrogen-clusters (NC) even in the very dilute regime (nitrogen concentrations lower than 0.3%) [6, 7]. The modification of the electronic properties, e.g., the electron effective mass and the gyromagnetic factor of electrons...
KeywordsOptical Excitation Carrier Relaxation Optical Matrix Element TRPL Measurement Incorporated Nitrogen Atom
The Marburg Group acknowledges funding by the Deutsche Forschungsgemeinschaft (DFG) through the research group 483 “Metastable Compound Semiconductor Systems and Heterostructures.”
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- 1.Buyanova IA, Chen WM (2004) Physics and applications of dilute nitrides. In: Manasreh MO (series ed) Optoelectronic properties of semiconductors and superlattices. Taylor and Francis, New York, and references thereinGoogle Scholar
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