Journal of Materials Science

, Volume 42, Issue 10, pp 3569–3572 | Cite as

Strain analysis of a GaN epilayer grown on a c-plane sapphire substrate with different growth times

  • S. I. Cho
  • K. Chang
  • Myoung Seok KwonEmail author


The strain analysis of a GaN epilayer with different growth times on a c-plane sapphire substrate via a two-step growth method, using low-pressure, metalorganic chemical vapor deposition, was conducted based on the precise measurement of the lattice parameters, using high-resolution X-ray diffraction. The high-temperature growth time was changed at a fixed growth condition. The c- and a-lattice parameters were measured, followed by the out-of-plane and in-plane strains. Then, the biaxial and hydrostatic components were extracted from the total strain values obtained, and were discussed in this paper as functions of GaN growth time.


Biaxial Strain Hydrostatic Strain Increase Growth Time Biaxial Elastic Modulus Horizontal MOCVD Reactor 



This work was accomplished with support from the 2005 research fund of the University of Seoul.


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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Department of Chemical EngineeringUniversity of SeoulSeoulSouth Korea
  2. 2.Department of Materials Science and EngineeringUniversity of SeoulSeoulSouth Korea

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