Improvement electrical properties of sol–gel derived lead zirconate titanate thick films for ultrasonic transducer application
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In this work, a fabrication process of piezoelectric PZT [Pb(Zr0.52Ti0.48)O3] thick films up to 60 μm deposited on silicon and aluminum substrates is reported. Crystalline spherical modified PZT powder about 300 nm in diameter was used as filler. PZT polymeric precursor produced by Chemat Inc. was used as the matrix material. Spinning films were annealed at 700 °C for one hour in the furnace in air. The thickness of the thick films was measured using a scanning electron microscope (SEM). Compared with previous piezoelectric PZT composite films, the modified piezoelectric thick films exhibit better dielectric properties. The dielectric constant is over 780 and dielectric loss is 0.04 at 1 KHz. Using a PiezoCAD model, the high frequency transducer was designed and fabricated. It showed a bandwidth of 75% at 40 MHz.
KeywordsThick Film Match Layer Backing Layer High Frequency Transducer High Frequency Ultrasound Imaging
The authors would like to thank Dr. Q. Zhang for fabrication of transducers. This research was supported by NIH P41-EB2182 and Phase I R43 RR014127-01A1.