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Journal of Materials Science

, Volume 42, Issue 15, pp 6377–6381 | Cite as

Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium

  • Z. X. Bi
  • R. ZhangEmail author
  • Z. L. Xie
  • X. Q. Xiu
  • Y. D. Ye
  • B. Liu
  • S. L. Gu
  • B. Shen
  • Y. Shi
  • Y. D. Zheng
Article

Abstract

The initial stages of the cubic indium nitride film growth at 350 °C were studied using low-pressure metal-organic chemical vapor deposition. The technique of the pre-deposition of indium was applied, that is, a layer of indium was first deposited on sapphire surface before the growth of InN. X-ray diffraction and X-ray photoelectron spectroscopy show that the pre-deposition of indium is able to promote the growth of InN films, and meanwhile, suppress the indium aggregation in the as-grown films. Atomic force microscopy images of InN films indicate that the pre-deposition of indium not only enhances the density of nucleate sites, but also facilitates the coalescence among the InN islands. The free energy calculations reveal that the pre-deposited indium atoms preferentially react with NH and N radicals after NH3 introduction, which leads to the formation of InN on the sapphire surface. The preferentially formed InN is then supposed to be responsible for the above phenomena.

Keywords

Sapphire Substrate Sapphire Surface Indium Aggregation Roughness Mean Square Saturation Electron Drift Velocity 

Notes

Acknowledgements

This work is supported by Special Funds for Major State Basic Research Project G2000068305, Hi-tech Research Project (2003AA311060, 2001AA311110), Distinguished Young Scientist Grant (60025411) and National Nature Science Foundation of China (60290083, 60136020).

References

  1. 1.
    Nanishi Y, Saito Y, Yamaguchi T (2003) Jpn J Appl Phys 42:2549CrossRefGoogle Scholar
  2. 2.
    Yang FH, Hwang JS, Yang YJ, Chen KH, Wang JH (2002) Jpn J Appl Phys 41:L1321CrossRefGoogle Scholar
  3. 3.
    Higashiwaki M, Matsui T (2002) Jpn J Appl Phys 41:L540CrossRefGoogle Scholar
  4. 4.
    Matsuoka T, Nakao M, Okamoto H, Harima H, Kurimoto E (2003) Jpn J Appl Phys 42:2288CrossRefGoogle Scholar
  5. 5.
    Tsuchiya T, Ohnishi M, Wakahara A, Yoshida A (2000) J Cryst Growth 220:191CrossRefGoogle Scholar
  6. 6.
    Saito Y, Yamaguchi T, Kanazawa H, Kano K, Araki T, Nanishi Y, Teraguchi N, Suzuki A (2002) J Cryst Growth 237–239:1017CrossRefGoogle Scholar
  7. 7.
    Inushima T, Mamutin VV, Vekshin VA, Ivanov SV. Sakon T, Motokawa M, Ohoya S (2001) J Cryst Growth 227–228:481CrossRefGoogle Scholar
  8. 8.
    Saito Y, Harima H, Kurimoto E, Yamaguchi T, Teraguchi N, Suzuki A, Araki T, Nanishi Y (2002) Phys Stat Sol (b) 234(3):796CrossRefGoogle Scholar
  9. 9.
    Davydov VY, Klochikhin AA, Emtsev VV, Ivanov SV, Vekshin VV, Bechstedt F, Furthmuller J, Harima H, Mudryi AV, Hashimoto A, Yamamoto A, Aderhold J, Graul J, Haller EE (2002) Phys Stat Sol (b) 230(2):R4CrossRefGoogle Scholar
  10. 10.
    Miura N, Ishii H, Yamada A, Konagai M, Yamauchi Y, Yamamoto A (1997) Jpn J Appl Phys 36:L256CrossRefGoogle Scholar
  11. 11.
    Bhuiyan AG, Tanaka T, Yamamoto A, Hashimoto A (2002) Phys Stat Sol (a) 194(2):502CrossRefGoogle Scholar
  12. 12.
    Yamamoto A, Tanaka T, Koide K, Hashimoto A (2002) Phys Stat Sol (b) 194(2):510CrossRefGoogle Scholar
  13. 13.
    Higashiwaki M, Matsui T (2003) J Cryst Growth 252:128CrossRefGoogle Scholar
  14. 14.
    Saito Y, Teraguchi N, Suzuki A, Araki T, Nanishi Y (2001) Jpn J Appl Phys 40:L91CrossRefGoogle Scholar
  15. 15.
    Bhuiyan AG, Yamamoto A, Hashimoto A, Ito Y (2002) J Cryst Growth 236:59CrossRefGoogle Scholar
  16. 16.
    Shen B, Zhou YG, Chen ZZ, Chen P, Zhang R, Shi Y, Zheng YD, Tong W, Park W (1999) Appl Phys A 68:593CrossRefGoogle Scholar
  17. 17.
    Parala H, Devi A, Hipler F, Maile E, Birkner A, Becker HW, Fischer RA (2001) J Cryst Growth 231:68CrossRefGoogle Scholar
  18. 18.
    Koukitu A, Takahashi N, Taki T, Seki H (1996) Jpn J Appl Phys 35:L673CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Z. X. Bi
    • 1
  • R. Zhang
    • 1
    Email author
  • Z. L. Xie
    • 1
  • X. Q. Xiu
    • 1
  • Y. D. Ye
    • 1
  • B. Liu
    • 1
  • S. L. Gu
    • 1
  • B. Shen
    • 1
  • Y. Shi
    • 1
  • Y. D. Zheng
    • 1
  1. 1.Key Laboratory of advanced Photonic and Electronic Materials, Department of PhysicsNanjing UniversityNanjingChina

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