High mobility organic transistor patterned by the shadow-mask with all structure on a plastic substrate
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Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow-mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide (ZrO2) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility 0.66 cm2/V s and Ion/Ioff > 105 was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.
KeywordsPentacene Plastic Substrate Gate Electrode Organic Thin Film Transistor Field Effect Mobility
This work was supported by grant No. 2M18850 from the project of NANO TECHNOLOGY RESEARCH ASSOCIATION.
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