Journal of Materials Science

, Volume 41, Issue 23, pp 8013–8016 | Cite as

Low-temperature Grüneisen gamma of II–VI semicoductor ZnS

  • T. V. Anil
  • C. S. MenonEmail author
  • K. P. Jayachandran
  • K. Shree Krishna Kumar


The theoretical study of low-temperature lattice thermal expansion of the II–VI semiconductor ZnS is attempted. The generalized Grüneisen gammas of the elastic waves propagating in different directions with respect to the [001] crystallographic axis of ZnS are calculated using the second- and third-order elastic constants. The values of mode Grüneisen gammas γj are determined and found generally positive except from γ2 at θ = 25° to θ = 65°. The low-temperature limit of the Grüneisen gamma \( \ifmmode\expandafter\bar\else\expandafter\=\fi{\gamma }\) is determined and compared with experimental values. Using this \( \ifmmode\expandafter\bar\else\expandafter\=\fi{\gamma },\) we calculated the Brugger gamma γBr and hence the low-temperature volume lattice thermal expansion γL. It is expected that the volume expansion is positive down to absolute zero for ZnS.


81.05.Dz 65.40.De 



Thanks are offered to University Grants Commission, New Delhi for the award of fellowship under FIP to TVA during the course of this work.


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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • T. V. Anil
    • 1
  • C. S. Menon
    • 1
    Email author
  • K. P. Jayachandran
    • 1
  • K. Shree Krishna Kumar
    • 2
  1. 1.School of Pure and Applied PhysicsMahatma Gandhi UniversityKottayamIndia
  2. 2.School of Technology and Applied SciencesMahatma Gandhi UniversityKottayamIndia

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