Temperature dependence of fractal dimension of grain boundary region in SnO2 based ceramics
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Fractal dimensions of grain boundary region in doped SnO2 ceramics were determined based on previously derived fractal model. This model considers fractal dimension as a measure of homogeneity of distribution of charge carriers. Application of the derived fractal model enables calculation of fractal dimension using results of impedance spectroscopy. The model was verified by experimentally determined temperature dependence of the fractal dimension of SnO2 ceramics. Obtained results confirm that the non-Debye response of the grain boundary region is connected with distribution of defects and consequently with a homogeneity of a distribution of the charge carriers. Also, it was found that C−T−1 function has maximum at temperature at which the change in dominant type of defects takes place. This effect could be considered as a third-order transition.
KeywordsSnO2 Charge Carrier Fractal Dimension Boundary Region Fractal Model
This work was financially supported by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) through the projects number 99/06470-0, 00/09818-6 and 02/01403-7, and by the Ministry for Science and Environmental Protection of Republic of Serbia.
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