Effects of thickness and post deposition annealing on the properties of evaporated In2S3 thin films
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Indium sulfide (In2S3) films with three different thicknesses (150, 400 and 600 nm) were prepared using thermal evaporation at room temperature. As prepared samples were amorphous and subsequent annealing at higher temperature (>573 K) resulted in the formation of crystalline phase. Optical band gap was found in the range of 1.9–2.9 eV for as prepared samples and decreased with increase in annealing temperature. Interference fringe like structure in transmission spectra revealed that the films were fairly smooth and reflective. Variations in electrical resistivity and photosensitivity as a function of film thickness and annealing temperature were studied. X-ray Photoelectron Spectroscopic (XPS) studies clearly indicated uniform distribution of both indium and sulphur along the film. Energy Dispersive X-ray analysis showed that as prepared samples were stoichiometric.
KeywordsSolar Cell Buffer Layer Thin Film Solar Cell Post Deposition Annealing Chemical Spray Pyrolysis
One of the authors (PMR) is grateful to Ministry of Non-conventional Energy Sources for providing research fellowship and authors are thankful to Nuclear Science Centre, New Delhi for providing experimental facility. Another author (KPV) is thankful to Cochin University of Science & Technology for granting sabbatical leave for conducting this study. The authors also would like to thank UGC for financial assistance through the DSA II scheme. Financial assistance from Department of Science and Technology, India through FIST programme also acknowledged.
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