P-type semiconducting Cu2O–NiO thin films prepared by magnetron sputtering
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P-type semiconducting thin films consisting of a new multicomponent oxide composed of Cu2O and NiO were deposited on glass substrates by r.f. magnetron sputtering using Cu2O–NiO mixed powder targets. The multicomponent oxide thin films deposited in an Ar atmosphere with a Ni content (Ni/(Cu + Ni) atomic ratio) in the range from 0 to 100 at.% were found to be p-type semiconductors. As the Ni content was increased in the range from 0 to about 30 at.%, the energy bandgap of the resulting films gradually increased as well as the obtained resistivity increased from 70 to 4 × 104 Ω cm, a consequence of decreases in both the Hall mobility and the hole concentration. The films prepared with a Ni content of about 30–50 at.% exhibited a relatively constant resistivity and energy bandgap. The resistivity and the energy bandgap of films prepared with a Ni content above about 60 at.% considerably increased as the Ni content was increased. Furthermore, a pn thin-film heterojunction prepared by depositing undoped n-ZnO and p-multicomponent oxide (Ni content of 50 at.%) thin films exhibited a rectifying I–V characteristic.
KeywordsCu2O Energy Bandgap Hall Mobility Oxide Thin Film CuAlO2
The authors wish to acknowledge Mr S. Suzuki, H. Fukagawa, K. Houjyou, and K. Hosoe for their technical assistance in the experiments.